Allicdata Part #: | 2SA1837FM-ND |
Manufacturer Part#: |
2SA1837(F,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 230V 1A TO220NIS |
More Detail: | Bipolar (BJT) Transistor PNP 230V 1A 70MHz 2W Thro... |
DataSheet: | 2SA1837(F,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 230V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
Power - Max: | 2W |
Frequency - Transition: | 70MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220NIS |
Base Part Number: | 2SA1837 |
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In electronics, the 2SA1837 (F,M) transistor is a type of Transistors - Bipolar (BJT) - Single. This device is typically used in switching and amplification applications and is comprised of two P-type layers and one N-type layer. The layers are heavily doped, meaning that the material has an extreme concentration of a certain impurity, which lets current flow through them in a certain way. This structure is known as a PNP structure, as the P-type layers are "positive" while the N-type layer is "negative".
When the base-emitter voltage (Vbe) of the 2SA1837 (F,M) is pushed above 0.6V, the base-emitter junction becomes forward biased, and current flows from the emitter to the base. This current flow itself provides the current for the collector as the device starts to operate in the active region. As a result of this, if the base current is increased, the amplified current that is produced from the collector increases accordingly.
Basically, this transistor is used to enhance the current level at desired conditions. It is used in a variety of applications, such as low frequency power amplifiers and audio amplifiers. Its low noise characteristics make the 2SA1837 (F,M) an ideal choice for such applications, as it is able to amplify small signals with great accuracy. It is also frequently used in switching circuits, as its high switching frequency allows it to switch between two different states quickly and efficiently.
The maximum current gain of the 2SA1837 (F,M) is typically between 50 and 250, giving it enough output current capability to be used in most circuits. Its low voltage drop ensures high efficiency, as the power supply can produce more energy for the circuit with less energy lost as heat. This is especially important if the transistor is to be used in a circuit that runs on a battery.
The 2SA1837 (F,M) is also known for its low noise level. This is because the device employs a built-in capacitive noise cancellation system, which helps to eliminate any unwanted noise produced by the transistor itself. This makes it an ideal choice for applications such as audio amplifiers, which require sound to be amplified without any type of noise.
Overall, the 2SA1837 (F,M) transistor is a very reliable and efficient transistor. It provides good current gain, low noise and high efficiency, making it an ideal choice for a variety of applications. Furthermore, its low Vbe ensures that it can be used in circuits powered by small batteries, and its low noise level ensures that it produces excellent sound quality when used in audio amplification systems. With its wide range of features, the 2SA1837 (F,M) is an excellent choice for a variety of electronics projects.
The specific data is subject to PDF, and the above content is for reference
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