2SA1708T-AN Allicdata Electronics
Allicdata Part #:

2SA1708T-AN-ND

Manufacturer Part#:

2SA1708T-AN

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 100V 1A NMP
More Detail: Bipolar (BJT) Transistor PNP 100V 1A 120MHz 1W Thr...
DataSheet: 2SA1708T-AN datasheet2SA1708T-AN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: 3-NMP
Description

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The 2SA1708T-AN is a high voltage and high current gain, high reliability PNP transistor. It is a type of bipolar junction transistor (BJT) used mainly in switching applications.

The transistor is made with a package of TO-220AB. It offers superior reliability, superior heat dissipation and long term reliability due to the improved silicon coverage and thermal stability. It has low on-state voltage and high blocking voltage, which makes it suitable for the application of high voltage switching protocols.

The 2SA1708T-AN has a DRAIN current up to 800mA, which makes it suitable for high current applications. It also has a breakdown voltage of at least 400V, making it suitable for high voltage applications as well. The 2SA1708T-AN has a Vce@ Ic of at least 2.2V @ 800mA, making it suitable for low power applications. The 2SA1708T-AN has a POWER dissipation of up to 2.75W, making it ideal for load power transfer applications.

The working principle of the 2SA1708T-AN is similar to any other BJT transistor. It is an electronic switch which works by controlling the current between the collector and the emitter terminals. When the base terminal is supplied with a small amount of current, the transistor will start to conduct, allowing the collector current to flow from collector to emitter. The amount of current that is allowed to flow through the collector to the emitter is controlled by the base-emitter voltage and the collector-emitter voltage.

The transistor can be used in a variety of applications including motor controls, amplifiers and high voltage switching applications. The 2SA1708T-AN is a very reliable transistor, thanks to its improved silicon coverage and thermal stability. It is an ideal choice for applications where reliability and high efficiency is the key.

The 2SA1708T-AN is a popular choice among users due to its high voltage and current gain, and its long term reliability. It is an ideal choice for applications where reliability and efficiency are crucial. The 2SA1708T-AN is a great choice for applications that require high voltage and high current switching capabilities.

The specific data is subject to PDF, and the above content is for reference

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