Allicdata Part #: | 2SA1020-YT6WNLF(J-ND |
Manufacturer Part#: |
2SA1020-Y,T6WNLF(J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 2A 50V TO226-3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T... |
DataSheet: | 2SA1020-Y,T6WNLF(J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 500mA, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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The 2SA1020-Y,T6WNLF(J is a single bipolar transistor (BJT) belonging to the 2SA series produced by Rohm. This transistor has the PNP plastic encapsulated package and features high current gain and low saturation voltage.
Application Field
2SA1020-Y,T6WNLF(J can be used in a variety of different applications, including power amplifiers, signal amplifiers, switching applications, and instrumentation. This versatile transistor can be used in audio systems, medical devices, scientific equipment, computer and home office equipment, and telecommunications.
The 2SA1020-Y,T6WNLF(J transistor can be used in various pairs and combinations, allowing it to be used as amplifiers, as switches, or even as logic components.
Working Principle
2SA1020-Y,T6WNLF(J depends on the flow of charge carriers between two different regions of doped semiconducting material, the base and the collector. This device is made up of a PNP semiconductor, meaning it has a positive (N-type) region between two negative (P-type) regions.
The charge carriers, or electrons, flow from the negative (P-type) region of the 2SA1020-Y,T6WNLF(J to the positive (N-type) region of the transistor in order to conduct current. When a small current is applied to the base of the transistor, a larger current is allowed to flow through the collector-emitter region.
The 2SA1020-Y,T6WNLF(J also features an HFE, or current gain. The HFE is the ratio between the current gain and the base current, and it is also known as the collector to emitter current ratio. The higher the HFE of the transistor, the more efficient it is.
The 2SA1020-Y,T6WNLF(J also has a low saturation voltage, meaning the transistor requires less voltage input for the same amount of current output. This transistor also has a high current gain and low switching noise, which makes it ideal for a wide variety of applications.
2SA1020-Y,T6WNLF(J is a versatile and reliable transistor that can be used in a variety of applications. Its high current gain and low saturation voltage make it an excellent choice for audio amplifiers, signal amplifiers, switching applications, and instrumentation.
The specific data is subject to PDF, and the above content is for reference
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