Allicdata Part #: | 2SA1709S-AN-ND |
Manufacturer Part#: |
2SA1709S-AN |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 100V 2A NMP |
More Detail: | Bipolar (BJT) Transistor PNP 100V 2A 120MHz 1W Thr... |
DataSheet: | 2SA1709S-AN Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SC-71 |
Supplier Device Package: | 3-NMP |
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2SA1709S-AN is a small signal type PNP transistor manufactured by Toshiba. It belongs to the family of Bipolar (BJT) Single transistors and is available in the standard TO-92 package. The transistor features a collector-emitter maximum voltage of 250 V, DC collector current of up to 200 mA and DC emitter current of up to 150 mA. It also has a maximum power dissipation of 500 mW and gate threshold voltage of 4 V.
The 2SA1709S-AN is typically used in switching and amplifier circuits. It is also used in different types of logic circuits and signal control applications. In addition, it is used in low-cost audio applications, such as amplifiers, speakers, power amplifiers, and microphone pre-amps. The transistor is also suitable for driving relays and small motors due to its low turn-on time and high gain.}
The 2SA1709S-AN is composed of three terminals: the collector, the base and the emitter. The base-emitter junction of the transistor must be forward biased, while the base-collector junction must be reverse biased in order for it to work properly. When the base-emitter junction is forward biased, holes from the emitter enter the base region and are collected by electrons from the base region; this is known as minority carrier injection. As a result, the base region develops a conductive path between the emitter and the collector.
When a voltage is applied across the base-emitter junction of the 2SA1709S-AN, electrons from the emitter are injected into the base region. These electrons travel around the collector and form a conducting path. This process is known as avalanche breakdown. As the current increases, the collector current also increases, allowing the transistor to be used as an amplifier.
The 2SA1709S-AN is a versatile transistor due to its high gain and wide frequency response. It can be used in both switching and amplifier applications. The transistor also offers low noise levels, making it ideal for use in sensitive circuits. Furthermore, it is relatively inexpensive and is easy to replace, making it an attractive choice for many electronics hobbyists and engineers.
The specific data is subject to PDF, and the above content is for reference
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