2SA1774EBTLQ Discrete Semiconductor Products |
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Allicdata Part #: | 2SA1774EBTLQTR-ND |
Manufacturer Part#: |
2SA1774EBTLQ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 50V 0.15A EMT3F |
More Detail: | Bipolar (BJT) Transistor PNP 50V 150mA 140MHz 150m... |
DataSheet: | 2SA1774EBTLQ Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | EMT3F (SOT-416FL) |
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The 2SA1774EBTLQ is a PNP transistor specifically designed and manufactured by Torex Semiconductor LTD. It is an NPN bipolar transistor with a wide range of useful applications. This transistor is primarily used for audio, switching and other low-power circuit applications.
A bipolar transistor is a two-terminal device that is capable of controlling a large current with a small input signal. Consisting of a single PNP and two NPN bipolar junction transistors, the 2SA1774EBTLQ transistor has a low collector-emitter saturation voltage, low noise and high DC current gain. The collector and emitter are connected in a common transistor array, allowing for greater power transfer. The base of the transistor has a direct connection, which provides a low-power operation and high switching speed.
The 2SA1774EBTLQ transistor is composed of a silicon epitaxial layer and a metallic base. The epitaxial layer consists of a refractory compound that results in a high conductivity between the collector and emitter. The metallic base is connected to the emitter, which serves to limit the current gain of the transistor. The base also helps protect the collector from high voltages. The 2SA1774EBTLQ is designed to be low power, with a range of typical voltages from 5V to 10V and a rating of up to 500mA.
The 2SA1774EBTLQ transistor has a variety of useful applications in low-power audio and switching circuits. Because of its low noise and high current gain, it can be used in amplifiers or as a power transistor for audio equipment. The PNP construction allows for fast switching and low power dissipation, making it ideal for use in logic circuits and digital applications. The 2SA1774EBTLQ is also used in voltage regulatorsas well as power supplies, offering efficient and increased switching capacity in noisy environments.
The working principle of the 2SA1774EBTLQ transistor is based on the PNP construction and the base current control of current flow. When the base current is low, the emitter current is small as well, which in turn limits the collector current. When the base current is increased, the collector current is also increased. This allows for greater current flow through the transistor, which can be used to control the voltage output through the collector.
The 2SA1774EBTLQ transistor can be used in a wide range of applications, including audio, switching, voltage regulators, and power supplies. Its low-power construction and high current gain make it ideal for use in audio and digital devices, while its fast switching capabilities make it suitable for use in logic circuits and voltage regulators. In addition, its high-voltage protection makes it ideal for use in devices that require a wide range of voltages.
The specific data is subject to PDF, and the above content is for reference
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