Allicdata Part #: | 2SA1900T100QTR-ND |
Manufacturer Part#: |
2SA1900T100Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 50V 1A SO-89 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 1A 150MHz 2W Surf... |
DataSheet: | 2SA1900T100Q Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 3V |
Power - Max: | 2W |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MPT3 |
Base Part Number: | 2SA1900 |
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.2SA1900T100Q is a type of transistor typically classified under Single Bipolar Junction Transistors (BJT) and widely used in devices that requires switching functions. It is an NPN transistor consisting of three components which are an emitter, a base, and a collector. The majority of these transistors are typically made from silicon and consist of an Epitaxial BASE and a planarized dielectric Structure.
It is a low power transistor used to amplify small signals up to a certain level. It is a very versatile transistor used to perform many important tasks like audio amplification, current gain, voltage switch, and base resistance behavior modulation. Additionally, it is used in military and consumer electronics, in radio transmitters and receivers, in robotics and as an adjustable current source in portable applications.
The mode of operation of this transistor is based on the principle of a junction of three different type of semiconductor materials connected together in order to form a circuit. By applying a bias to the base, current movement through the emitter-base & base-collector batteries creates the bias conditions needed for the transistor to amplify the signal. When a current is applied to the base, it will create a potential difference across the two junctions of the transistor. This potential difference creates an electric field that controls the current flow from the emitter to the base and from the base to the collector and hence the output of the transistor.
The 2SA1900T100Q is usually used for low-frequency audio amplifier applications. The specifically designed two-layer structure results in a robust package that provides improved thermal management. It also offers low noise, low power consumption, and high-precision switching and performance. Furthermore, its drain current is high so it is capable of driving larger loads, which makes it particularly suited for high current applications.
The 2SA1900T100Q is an integrated circuit that functions as a current switch that can be used in many applications. Its small size and power capability make it ideal for small scale electronic projects. Additionally, it is also used to bridge the gap between digital and analog, allowing for various control and power needs to be addressed as required.
In conclusion, the 2SA1900T100Q transistor is a versatile and robust single Bipolar Junction Transistor (BJT) designed for low-power operation and high-frequency switching applications. Its small size and power capability, as well as its two-layer structure make it suitable for many small-scale applications. Its drain current is relatively high, allowing it to be used in current-driven devices.
The specific data is subject to PDF, and the above content is for reference
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