2SA1020-Y(T6ND1,AF Allicdata Electronics
Allicdata Part #:

2SA1020-Y(T6ND1AF-ND

Manufacturer Part#:

2SA1020-Y(T6ND1,AF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 2A 50V TO226-3
More Detail: Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T...
DataSheet: 2SA1020-Y(T6ND1,AF datasheet2SA1020-Y(T6ND1,AF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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2SA1020-Y(T6ND1,AF Application Field and Working Principle

Introduction
The 2SA1020-Y(T6ND1,AF is a NPN type (Negative Positive Negative) bipolar transistor, which belongs to the Single category. This type of bipolar transistor is used in both digital and analog applications, and is highly efficient when compared to other types of transistors. As a result, it is used in a wide variety of applications, from simple power switches to complex power control circuits.

Working Principle
Bipolar transistors, such as the 2SA1020-Y(T6ND1,AF, are composed of two PN (positive-negative) junctions, which are referred to as base-collector and emitter-collector. When a voltage is applied to the base terminal, current is allowed to flow between the collector and emitter junctions, creating an amplification effect. This amplification can be used to amplify a weak signal or create a switch to control the flow of power.

Structure
The 2SA1020-Y(T6ND1,AF is composed of an N-type (negative) semiconductor material, typically silicon, with a hole between the base and collector contacts. The hole is referred to as the emitter. The NPN transistor is a three-layer device with a layer of N-type material between the base and emitter, and another layer of N-type material between the collector and emitter.

Uses
The 2SA1020-Y(T6ND1,AF is used in many different analog applications, such as power switches, digital logic circuits, and linear amplifiers. It is also used for power control circuits, such as motor speed controls and current amplifiers. It is also used in audio and video equipment, such as amplifiers and receivers. This transistor is an ideal choice for applications that require high power, high efficiency, and low power consumption. It is also used in light emitting diode (LED) circuits and other small signal devices.

Advantages & Disadvantages
The main advantages of the 2SA1020-Y(T6ND1,AF are its high efficiency, low power consumption, and small size. It also has a low forward voltage drop, which makes it ideal for circuits that require low current. The main disadvantages of this particular transistor are that it has a low gain and can be destroyed easily if over-driven.

Conclusion
The 2SA1020-Y(T6ND1,AF is an NPN type bipolar transistor, which is ideal for a wide range of analog and digital applications. This type of transistor is highly efficient, has a low forward voltage drop, and is very small in size. It is perfect for power switches, logic circuits, LEDs, and other small signal devices. However, its main disadvantages are its low gain and susceptibility to being destroyed if over-driven.

The specific data is subject to PDF, and the above content is for reference

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