Allicdata Part #: | 2SA1020-ND |
Manufacturer Part#: |
2SA1020 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 2A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T... |
DataSheet: | 2SA1020 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 500mA, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92 (TO-226) |
Base Part Number: | 2SA1020 |
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The 2SA1020 is a Silicon NPN epitaxial planar type transistor, packaged as a leaded component. This type of transistor has a lower gain compared to other transistors, making it ideal for applications that require a lower amplifier stage than other transistors. The 2SA1020 is designed primarily for use in audio equipment, as it can be safely operated at high current levels and is suitable for driving audio power amplifiers and loudspeakers.
The 2SA1020 is a single-transistor device, meaning it comprises of only one epitaxial layer connecting the active component to the substrate. This means that the device has no contacts to the base and collector. This very cost-effective transistor is available in a metal can, metal case and plastic package, making it an ideal component for many applications.
The working principle behind the 2SA1020 transistor is based on the NPN circuit structure. This means that the device operates in an NPN configuration, using voltage to switch and control the current passing through it. The transistor consists of three main layers, the emitter, base, and collector. The emitter is the layer that injects electrons, while the collector receives the electrons. The base layer serves as a gate between the emitter and collector. When the base voltage is greater than the emitter voltage, the electrons will pass through the base gate and onto the collector, enabling the current to flow.
The 2SA1020 transistor is mostly used in audio systems, offering low-noise amplification in preamp and low-noise amplification of line-level signals in power amplifier stages. It is also used in industrial-level electronics, providing high-efficiency and low-noise operation for speed control, device protection and other applications. Additionally, it is suitable for circuits where low-noise voltage control is needed, such as remote control circuits and temperature control circuits.
The maximum power dissipation for the 2SA1020 transistor is around 5 watts. This makes it a great device for cost-effective power switching and linear power amplification. It also has a high transition frequency of 18 MHz, making it suitable for high-speed switching and audio applications. The 2SA1020 also has a wide operating temperature range of 0-100 degrees Celsius, making it suitable for use in variety of operating environments.
The 2SA1020 is an economical, high-performance transistor with an impressive range of applications. These devices offer low-noise, high-efficiency operation for the majority of power electronics applications and audio systems. It is also suitable for industrial applications, providing a cost-effective solution for switching and linear power amplification.
The specific data is subject to PDF, and the above content is for reference
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