2SA1774T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	500pA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 6V
Power - Max:	150mW
Frequency - Transition:	140MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SC-75, SOT-416
Base Part Number:	2SA1774

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Introduction

The 2SA1774T1G is a bipolar junction transistor (BJT) that is used in many different applications. It is a single transistor, meaning it is composed of a single block or cell. This transistor is composed of two active regions, which are the emitter and collector. The base region of the transistor is used to control the flow of current through the device. This transistor is ideal for use in switching circuits, amplifying signals, and protecting circuits from voltage spikes.

Characteristics

The 2SA1774T1G has several characteristics that make it attractive for use in a variety of applications. The total power dissipation of this transistor is 375 mW at 25°C free-air temperature, and the maximum collector dissipation is 300 mW at 25°C free-air temperature. The collector-to-emitter saturation voltage of this device is 0.2 V at 10 mA of collector current. The peak collector current of the device is 10A, with the peak base current of 150 mA. The device has an operating temperature range of -55°C to +150°C.

Application Field

The 2SA1774T1G is a versatile transistor that can be used in a variety of applications. It is mainly used for power switching and amplification. In power switching applications, the transistor is used to control the supply voltage and current between two points in an electrical circuit. It can be used to control the supply voltages of relays, solenoids, and motors. In amplification applications, this transistor is used to amplify weak signals. It is also used in voltage shunt circuits, where it is used to protect against excess supply voltages.

Working Principle

The 2SA1774T1G transistor works by using the flow of electrons between the emitter and collector. The base region of the transistor is used to control the movement of electrons. When current is applied to the base, it will create an electric field in the base region that will cause electrons to move from the emitter to the collector of the transistor. This movement of electrons can be used to switch a circuit on and off, amplify a signal, or protect a circuit from voltage shocks.

Conclusion

The 2SA1774T1G is a versatile single transistor that can be used for power switching, amplification, and protection from voltage spikes. This transistor has many attractive characteristics, such as a total power dissipation of 375 mW and a collector-to-emitter saturation voltage of 0.2 V. The transistor uses the applications of a bipolar junction transistor, where current is controlled by the base region and electrons move from the emitter to the collector. This makes it an ideal choice for many applications.

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