Allicdata Part #: | 2SA1020-Y(HITFM)-ND |
Manufacturer Part#: |
2SA1020-Y(HIT,F,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 2A 50V TO226-3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T... |
DataSheet: | 2SA1020-Y(HIT,F,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 500mA, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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2SA1020-Y(HIT,F,M) Application Field and Working Principle
The 2SA1020-Y(HIT,F,M) is a PNP silicon epitaxial transistor classified as a Bipolar Junction Transistor (BJT). This type of transistor is a single transistor and is commonly used for general purpose and low frequency amplifier applications as well as for switching operations. It is primarily a two terminal device with two base leads and one collector lead.
The 2SA1020-Y(HIT,F,M) is a low power transistor that has a total power dissipation of 0.5 W. It is manufactured in a TO-92 plastic package. The 2SA1020-Y(HIT,F,M) has an operating temperature range of -55 °C to +150 °C with a storage temperature range of -55 °C to +150 °C. It is also suitable for operation in hostile environments, making it resistant to moisture and dust.
The application field of the 2SA1020-Y(HIT,F,M) transistor is primarily focused on areas such as low frequency and general purpose amplifier circuits as well as for small signal switching applications. It can work with a maximum voltage rating of 30 V for the collector and 6V for the base. The current gain (scale of hFE) ranges from 30 to 80 with a maximum hFE of 80. The maximum frequency at which it can operate is 150MHz.
Working Principle
The 2SA1020-Y(HIT,F,M) transistor is a semiconductor device made up of P-type and N-type materials. It has two independent N-type regions (base and emitter) and a common P-type region that serves as the collector. When a high enough voltage is applied across the emitter-base junction of the 2SA1020-Y(HIT,F,M), the electrons in the N-type regions are swept across the N-P junction and combine with the holes in the P-region. As the electrons combine with the holes, a current of electrons flows through the collector-emitter junction, thus allowing the transistor to act as a current amplifier.
The current gain is determined by the ratio between the collector current to the base current, known as the hFE. The gain of the 2SA1020-Y(HIT,F,M) transistor can range from 30 to 80, with a maximum hFE of 80. This means that for every 1mA of collector current, the transistor can provide up to 8mA of base current. This makes the 2SA1020-Y(HIT,F,M) transistor a good choice for low frequency amplifier circuits and small signal switching applications.
Conclusion
The 2SA1020-Y(HIT,F,M) transistor is a PNP type Bipolar Junction Transistor (BJT) that is suitable for low frequency amplifier and small signal switching applications. It has an operating temperature range of -55 °C to +150 °C and a power dissipation rating of 0.5 W. The maximum voltage rating for the collector and base are 30 V and 6 V respectively. The maximum current gain (hFE) of the 2SA1020-Y(HIT,F,M) is 80, which makes it ideal for low frequency amplifier circuits and small signal switching applications.
The specific data is subject to PDF, and the above content is for reference
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