2SA1020-Y(HIT,F,M) Allicdata Electronics
Allicdata Part #:

2SA1020-Y(HITFM)-ND

Manufacturer Part#:

2SA1020-Y(HIT,F,M)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 2A 50V TO226-3
More Detail: Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T...
DataSheet: 2SA1020-Y(HIT,F,M) datasheet2SA1020-Y(HIT,F,M) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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2SA1020-Y(HIT,F,M) Application Field and Working Principle

The 2SA1020-Y(HIT,F,M) is a PNP silicon epitaxial transistor classified as a Bipolar Junction Transistor (BJT). This type of transistor is a single transistor and is commonly used for general purpose and low frequency amplifier applications as well as for switching operations. It is primarily a two terminal device with two base leads and one collector lead.

The 2SA1020-Y(HIT,F,M) is a low power transistor that has a total power dissipation of 0.5 W. It is manufactured in a TO-92 plastic package. The 2SA1020-Y(HIT,F,M) has an operating temperature range of -55 °C to +150 °C with a storage temperature range of -55 °C to +150 °C. It is also suitable for operation in hostile environments, making it resistant to moisture and dust.

The application field of the 2SA1020-Y(HIT,F,M) transistor is primarily focused on areas such as low frequency and general purpose amplifier circuits as well as for small signal switching applications. It can work with a maximum voltage rating of 30 V for the collector and 6V for the base. The current gain (scale of hFE) ranges from 30 to 80 with a maximum hFE of 80. The maximum frequency at which it can operate is 150MHz.

Working Principle

The 2SA1020-Y(HIT,F,M) transistor is a semiconductor device made up of P-type and N-type materials. It has two independent N-type regions (base and emitter) and a common P-type region that serves as the collector. When a high enough voltage is applied across the emitter-base junction of the 2SA1020-Y(HIT,F,M), the electrons in the N-type regions are swept across the N-P junction and combine with the holes in the P-region. As the electrons combine with the holes, a current of electrons flows through the collector-emitter junction, thus allowing the transistor to act as a current amplifier.

The current gain is determined by the ratio between the collector current to the base current, known as the hFE. The gain of the 2SA1020-Y(HIT,F,M) transistor can range from 30 to 80, with a maximum hFE of 80. This means that for every 1mA of collector current, the transistor can provide up to 8mA of base current. This makes the 2SA1020-Y(HIT,F,M) transistor a good choice for low frequency amplifier circuits and small signal switching applications.

Conclusion

The 2SA1020-Y(HIT,F,M) transistor is a PNP type Bipolar Junction Transistor (BJT) that is suitable for low frequency amplifier and small signal switching applications. It has an operating temperature range of -55 °C to +150 °C and a power dissipation rating of 0.5 W. The maximum voltage rating for the collector and base are 30 V and 6 V respectively. The maximum current gain (hFE) of the 2SA1020-Y(HIT,F,M) is 80, which makes it ideal for low frequency amplifier circuits and small signal switching applications.

The specific data is subject to PDF, and the above content is for reference

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