Allicdata Part #: | 2SA1873-Y(TE85LF)TR-ND |
Manufacturer Part#: |
2SA1873-Y(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP 50V 0.15A USV |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) Matche... |
DataSheet: | 2SA1873-Y(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) Matched Pair, Common Emitter |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 6V |
Power - Max: | 200mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: | USV |
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The 2SA1873-Y(TE85L,F) is a semiconductor device belonging to the Transistors - Bipolar (BJT) - Arrays category of transistors. It is a three-terminal device with an emitter, base and collector and provides good switching characteristics in a wide range of operating conditions. This transistor array is suitable for use in motor control applications, as well as for voltage regulation, logic gates and amplification.
The 2SA1873-Y(TE85L,F) uses silicided diffused semiconductor technology to provide accurate triggering of the base voltage. It is based on an adjustable current source that allows the user to adjust the current gain, making it ideal for various gain-dependent applications. The current gain adjustment of the transistor array can be precisely set by the control input voltage of the base, allowing the user to select a suitable gain for the application.
The 2SA1873-Y(TE85L,F) benefits from a wide power supply voltage range, allowing it to be used in a variety of applications. The collector-emitter saturation voltage is low and stable, making the transistor array suitable for use in high-pressure or high-temperature applications. In addition, it exhibits high yielding and reliable operation due to its rugged design.
The 2SA1873-Y(TE85L,F) is also capable of high-speed switching, allowing it to be used in applications that require fast operation. The high output impedance, low input capacitance as well as low current consumption are additional advantages that make the device suitable for high-frequency applications. Its low temperature drift characteristics make it suitable for use in automotive and aerospace environments.
The working principle of the 2SA1873-Y(TE85L,F) is based on the principle of controlling current flow. A small base current is passed through the emitter-base junction which causes the current to flow from the collector to the emitter. This current flow will be amplified due to the gain of the transistor, which is determined by the current gain, current gain-bandwidth product and the collector-base capacitance. The base current flows through the transistor array, and this current will determine the gain of the transistor, enabling the user to select an appropriate gain for the application.
The 2SA1873-Y(TE85L,F) is an ideal choice for multiple applications, such as motor control, voltage regulation, logic gates, amplification and high-frequency switching. The transistor array provides good switching characteristics and low power consumption, making it a suitable device for a variety of applications. Its precise gain control and rugged design make it suitable for use in a wide range of environments, including automotive and aerospace.
The specific data is subject to PDF, and the above content is for reference
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GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...