2SA1303 Allicdata Electronics
Allicdata Part #:

2SA1303-ND

Manufacturer Part#:

2SA1303

Price: $ 1.19
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: TRANS PNP 150V 14A TO3P
More Detail: Bipolar (BJT) Transistor PNP 150V 14A 50MHz 125W T...
DataSheet: 2SA1303 datasheet2SA1303 Datasheet/PDF
Quantity: 1000
2040 +: $ 1.08486
Stock 1000Can Ship Immediately
$ 1.19
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 14A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V
Power - Max: 125W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Description

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2SA1303 is a general purpose NPN transistor widely used in low-power audio amplification, switching applications and general series, low-noise amplifier applications. It is classified as a single bipolar (BJT) transistor.

The 2SA1303 is made with a P-type substrate and has an emitter-base breakdown voltage of 60V, collector current of 200mA, power dissipation of 625mW, and gain bandwidth product of 8MHz. It is an NPN type with an hFE (gain) of 80 when the relative temperature is 25°C.

The most notable feature of the 2SA1303 is its wide range of applications. It can be used in low-power audio amplifiers, in switching applications, as a series amplifier, and as a low-noise amplifier. Its other features include its wide input range, low noise, and low harmonic distortion. The values of the hFE (gain) up to 200 and the total current gain of 800 at 1kHz make it very popular among electronics hobbyists and engineers.

The working principle of the 2SA1303 is the same as the other PNP and NPN transistors. The two main components are the collector and the emitter junctions. The base forms a connection between the two junctions. When an external voltage is applied, a current flows through the base and creates a small electric field. This field then affects the electron distribution between the collector and the emitter. This is what creates the gain.

As current flows through the collector, it is amplified by the change in the electric field in the base junction. This causes a much greater current to flow between the collector and the emitter. The amount of current amplification is determined by the hFE value of the transistor. The higher the hFE value, the higher the current amplification.

The 2SA1303 can also be used in high impedance applications, such as RF amplifiers, as it has high input impedance and high output impedance. This makes it ideal for applications which require low noise, low power consumption, and high precision. The transistor’s high gain also makes it very useful for low-power audio applications.

In conclusion, the 2SA1303 is a single bipolar transistor which is commonly used for low-power audio applications, switching applications, and general series amplifier applications. It has a wide input range and a low noise, low harmonic distortion, and high gain characteristics. It also has a high input impedance and a high output impedance which makes it suitable for high impedance applications. Its wide range of applications and its low current consumption make it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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