| Allicdata Part #: | 2SA1225-Y(Q)-ND |
| Manufacturer Part#: |
2SA1225-Y(Q) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PNP 160V 1.5A PW-MOLD |
| More Detail: | Bipolar (BJT) Transistor PNP 160V 1.5A 100MHz 1W S... |
| DataSheet: | 2SA1225-Y(Q) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 1.5A |
| Voltage - Collector Emitter Breakdown (Max): | 160V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 5V |
| Power - Max: | 1W |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | PW-MOLD |
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The 2SA1225-Y(Q) is a bipolar junction transistor (BJT) in a single package type, making it suitable for a wide range of applications. It has two terminals, commonly known as the base and the collector, connected to an integrated circuit, and a third terminal, known as the emitter. The BJT is composed of a p-type and an n-type semiconductor material, creating an electronic component that can both regulate current flow and has a low power output.
The 2SA1225-Y(Q) has a wide range of applications. It is often used in switching and amplifier circuits, and has been popularly used in test and measuring instruments, security systems, and audio amplifiers. It has also been used in missile control systems and radar systems due to its high switching speed and reliability.
The working principle of the transistor includes the amplification of a small amount of existing current. This is known as “gain” and it allows the transistor to increase voltage, current, or both. It has three terminals: the emitter, the collector, and the base. The emitter and the collector are reverse-biased, meaning electrons flow away from the emitter and towards the collector. The base is responsible for controlling the current flow between the two. When a voltage is applied to the base, the flow of electrons is then controlled by the current that is incorporated in the base.
The 2SA1225-Y(Q) is a very popular BJT due to its great performance in both switching and linear applications. The device is also known for its low power consumption and reliability in high speed applications. It can operate at a wide range of temperatures and bus voltages, making it suitable for a variety of applications. In addition, its low power output allows for greater energy efficiency in low power designs.
In conclusion, the 2SA1225-Y(Q) is a popular bipolar junction transistor (BJT) in a single package type and is suitable for a wide range of applications. It amplifies a small current, and can be used in test and measuring instruments, security systems, and audio amplifiers. It has a low power output and is reliable in high speed applications. It can be used in switching and amplifier circuits, and can operate at a wide range of temperatures and bus voltages, making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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2SA1225-Y(Q) Datasheet/PDF