Allicdata Part #: | 2SA1774TLSTR-ND |
Manufacturer Part#: |
2SA1774TLS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 50V 0.15A SOT-416 TR |
More Detail: | Bipolar (BJT) Transistor PNP 50V 150mA 140MHz 150m... |
DataSheet: | 2SA1774TLS Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | EMT3 |
Base Part Number: | 2SA1774 |
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The 2SA1774TLS is a silicon PNP epitaxial type transistor that is classified under transistors – bipolar, single type. It is typically used in many applications such as, power switching circuits, inverters, converters, and amplifiers, among others.
The 2SA1774TLS transistor has an exceptional power handling capability as it is designed to work at 150V, a collector-emitter voltage rating of 0.7A and a collector current rating of 0.2A. It is also excellent for operation at high frequencies, providing the user with fast switching for circuits such as those involved in high-fidelity audio amplifiers and motor control. The 2SA1774TLS transistor also has an excellent breakdown voltage rating and a good isolation performance.
The 2SA1774TLS transistor also provides an excellent high speed switching time with a current gain-bandwidth product of 1.7 GHz. These factors, combined with its ability to withstand high temperature, make it a suitable choice for use in a wide range of applications, from low power audio amplifiers to high power switching applications.
The 2SA1774TLS transistor is formed from two or more layers of semiconductor material, typically silicon. These layers, which are known as the base and collector, are also joined by a layer of reverse biased diode material called the emitter. The combination of these layers form the p-n junction, which is the fundamental building block of most semiconductor devices.
The 2SA1774TLS transistor is a bipolar junction transistor (BJT) which has the ability to amplify current and voltage at a certain frequency. In a BJT, the current is controlled by the application of an input voltage at the base terminal. The current flow in the circuit is then amplified through the emitter-base junction and reaches the collector-base junction.
The working principle of the 2SA1774TLS transistor is based on the principle of “de-biasing”. This means that the current flow at the collector is diminished when the base-emitter voltage exceeds a certain threshold. This is due to the fact that the base-emitter junction acts as a diode and is therefore not able to conduct current when the base-emitter voltage is below a certain level. When the base-emitter voltage increases, the transistor is “de-biased”, meaning that the collector current is reduced.
The 2SA1774TLS transistor is highly versatile and is well suited for a wide range of applications. It is an ideal choice for use in switching and amplifier circuits, as well as in motor control applications. In addition, it also provides excellent high speed switching for high-fidelity audio amplifiers and power switching circuits.
The 2SA1774TLS transistor is a reliable and efficient device that is designed to operate in a wide range of applications. It has the capability to amplify current and voltage at high speeds with excellent power handling characteristics, making it the ideal choice for many applications. It is also an excellent choice for use in high power switching and amplifier circuits, as well as motor control circuits.
The specific data is subject to PDF, and the above content is for reference
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