2SA1806GRL Allicdata Electronics
Allicdata Part #:

2SA1806GRLTR-ND

Manufacturer Part#:

2SA1806GRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 15V 0.05A SSMINI-3
More Detail: Bipolar (BJT) Transistor PNP 15V 50mA 1.5GHz 125mW...
DataSheet: 2SA1806GRL datasheet2SA1806GRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 1V
Power - Max: 125mW
Frequency - Transition: 1.5GHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3
Base Part Number: 2SA1806
Description

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The 2SA1806GRL is a transistor from the BJT (Bipolar Junction Transistor) family, known as a ‘Single’ type. BJT transistors are three-terminal unipolar semiconductor devices which consist of two PN junctions and exist in a variety of configurations including PNP, NPN, and Darlington. This particular transistor is NPN in type and it is primarily composed of aluminum (Al) and silicon (Si).

With regards to the 2SA1806GRL’s application field, specifically, it can be used as an amplifier or switch, depending on the particular circuit design that is being used. It is also compatible with incorporating into audio and high-frequency circuit designs and is useful for high-speed digital switching.

The 2SA1806GRL is also especially notable for its multi-package option, offering a variety of packages that are available for high-volume applications such as plastic insulated devices (SOP) and metal insulated devices (SC-58).

As for its working principle, the 2SA1806GRL is designed to be a general-purpose transistor with low noise, good linearity, high breakdown voltage and good gain-bandwidth characteristics. It utilizes the NPN structure which when a certain current flows through the base and emitter, will then ‘turn-on’ the collector and prevent further current flow. This, in turn, allows for the regulation of current between the collector and emitter terminals of the transistor.

The 2SA1806GRL offers a wide range of features and benefits, not only in terms of its application fields and working principle, but also in its package styles. It is because of this that the 2SA1806GRL is such an indispensable component for a variety of circuits and applications, due to its ease of use, reliable performance, and low cost.In terms of its performance, the 2SA1806GRL offers a broad power range of 75W to 250W which makes it ideal for applications which require medium- to high-power devices. It also offers a DC collector current range of up to 250mA and has a wide operating temperature range from -60°C to +125°C. Lastly, it has a wide breakdown voltage range from -150V up to 1500V, making it suitable for a variety of voltage ranges.

Finally, the 2SA1806GRL design also offers a variety of protection features that help to extend the life and reliability of the device. These include a reverse current protection feature that prevents the transistor from exceeding its breakdown voltage, as well as a reverse-current protection feature which assists in mitigating spikes and preventing damage to the transistor.

In sum, the 2SA1806GRL is a versatile transistor from the BJT family capable of providing medium to high power for a wide range of applications, ranging from audio/high-frequency circuits to high-speed digital switching. It offers a variety of package styles, as well as protection features, making it suitable for a wide variety of applications in the field of electronics.

The 2SA1806GRL’s power ratings, versatile performance, and variety of package styles have collectively made this transistor an indispensable component in the field of electronic circuitry. It is the perfect choice for any engineer looking to utilize a transistor that offers high performance, low-cost, and reliable performance.

The specific data is subject to PDF, and the above content is for reference

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