
Allicdata Part #: | 2SA1381ESTU-ND |
Manufacturer Part#: |
2SA1381ESTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 300V 0.1A TO-126 |
More Detail: | Bipolar (BJT) Transistor PNP 300V 100mA 150MHz 7W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 10V |
Power - Max: | 7W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
Base Part Number: | 2SA1381 |
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Transistors - Bipolar (BJT) - Single
The 2SA1381ESTU is a voltaged-controlled, unipolar, NPN transistor type. This type of transistor is also known as a PNP counterpart. It has the ability to switch between two discrete voltage levels, thus controlling the amount of current flowing through the circuit. The 2SA1381ESTU is commonly used for applications in power supplies, op-amps and other analog circuits. The device usually does not require a heat sink, making it suitable for high-frequency operation.
Structure
The 2SA1381ESTU is manufactured using an insulated gate field-effect (IGFET) structure. This structure is comprised of a silicon wafer, which is highly doped with small amounts of n-type dopants. The wafer is covered with a thermally isolated gate and the p-type semiconductor layer is adjacent to the gate. This layer serves as the emitter. The n-type semiconductor layer serves as the collector. Lastly, the gate, or control contact, connects the emitter and collector.
Working Principle
The primary working principle of the 2SA1381ESTU is the voltage control of current flow between the emitter and the collector. When a positive voltage is applied to the gate, a conductive path is formed between the emitter and the collector, allowing current flow. In contrast, if the gate is left open or connected to ground, the current path is interrupted, resulting in the device acting as an open circuit.
The current gain of the 2SA1381ESTU device can vary widely depending on the amount of voltage applied to the gate. Generally, the maximum current gain (hfe) at saturation is approximately 30. This means that for every 1V of gate voltage, the current gain is approximately 30 times greater. Additionally, the device also exhibits a low cutoff frequency (fT) at frequencies ranging from 3.5GHz to 4.8GHz.
Application Fields
The 2SA1381ESTU transistor is used widely in power supplies, op-amps, and other analog circuits. Common applications include adjustable current-limiters, variable-gain amplifiers, and band-gap reference circuits. Additionally, the transistor can also be utilized in timing circuits, motor control circuits, and current-regulated AC-to-DC converters.
Conclusion
The 2SA1381ESTU transistor is a versatile voltage-controlled, unipolar NPN type, used for a wide variety of applications. Its ability to switch between two discrete voltage levels allows for control of the amount of current flowing through the circuit. Additionally, the device exhibits a low cutoff frequency and can be utilized in many analog circuit designs. The transistor is also noted for not requiring a heatsink in order to function, making it an optimal choice for high-frequency operation.
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