2SA1381FSTU

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SA1381FSTU is a n-p-n-type silicon transistor. It is used in various electronics circuits such as Amplifiers, Gate Driver, Switching Circuits and High Side Switches. 2SA1381FSTU transistors are usually used for high voltage applications due to its high voltage rating of 50V, high current rating of 3A and higher power dissipation capability.

The 2SA1381FSTU is a transistor with two base-emitter junctions, two collector-base junctions and two collector-emitter junctions. It belongs to Bipolar Junction Transistor (BJT) family. Generally, BJTs are three-terminal devices with two p-n junctions. One of the three terminals is the base, which is used to control the conduction from the collector to the emitter. The other two terminals are the collector and emitter, where electrons flow in and out respectively when the transistor is switched ON.

The 2SA1381FSTU involves a single n-p-n type setup, where the n-type material of the transistor functions as the collector and the p-type material acts as the emitter. When the base-emitter junction is forward-biased, electrons flow into the base region from the emitter and hole flow into the emitter from the base. This increases the number of holes in the base. At the same time, electrons are attracted to the collector material along with its junction and collected. The current from collector to emitter is called collector current, Ic. When the base-emitter junction is reversed bias, electrons from the base region filled with electrons flow out of the base and the collector current, Ic decreases. This controlling mechanism enables the transistor to be used for switching application.

The 2SA1381FSTU transistor has a wide range of applications mainly in high side switches, amplifiers, switching circuits and Gate Driver application. The working of the Gate Driver circuit is dependent on the rated load current and its operating speed, both of which depend on the 2SA1381FSTU transistor. This fast switching device is used in Gate Driver circuits to control the current on an opto-isolated circuit and power Mosfets. It is used as a line driver in communication circuits to drive a string of LED’s. It is also used as high power and current switching device in Battery Management System to control the charging and discharging of the battery.

The 2SA1381FSTU transistor has a maximum collector current of 3A and a maximum power dissipation of 4.5W. It has a maximum junction temperature of 150 degrees Celsius and can withstand a maximum voltage of 50V between the collector and emitter. Its typical Hfe value is 125 with a maximum error of 10 percent. The reverse breakdown voltage is 8V with a 10 percent tolerance. The 2SA1381FSTU transistor is usually used with the recommended operating temperature of -55 to 150 degree Celsius.

The specific data is subject to PDF, and the above content is for reference