Allicdata Part #: | 2SA1020-Y(T6ND3AF-ND |
Manufacturer Part#: |
2SA1020-Y(T6ND3,AF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 2A 50V TO226-3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T... |
DataSheet: | 2SA1020-Y(T6ND3,AF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 500mA, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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The 2SA1020-Y (T6ND3, AF) single bipolar junction transistor is a three-terminal semiconductor device with a base, emitter, and collector. It is mainly used in signal processing or power supply applications due to its high gain, low saturation voltage, and low power dissipation.
The 2SA1020-Y is mainly used as a switching device, providing a low saturation voltage while maintaining high maximum power dissipation. Its high gain and fast switching speed allow it to drive loads with relatively low power consumption, making it an ideal choice for general-purpose applications.
The 2SA1020-Y is also an ideal choice for low-power applications. Its low saturation voltage and low power dissipation make it an excellent choice for use in logic circuits, microprocessors, and communication circuits.
The 2SA1020-Y is also suitable for use as a switching circuit in power supply and signal processing applications. Its fast switching speed allows it to provide high-speed signal and power handling. Furthermore, its low saturation voltage and low power dissipation make it an effective choice for implementing DC-DC converter, oscillator, signal mixing, and power pulser circuits, among many others.
The 2SA1020-Y is a single bipolar junction transistor that operates on the principle of minority carrier injection. Minority carriers are created by applying forward bias voltage to the base-emitter junction. When the base-emitter junction is forward biased, electrons are injected from the emitter into the base, while holes are injected from the base into the emitter. This flow of electrons and holes allows current to flow from the collector to the emitter, resulting in a large amplification of the input signal.
Additionally, the 2SA1020-Y is designed to operate at very low temperatures. Its low-profile package is ideal for providing extra thermal management in high-temperature applications and for providing improved reliability for long-term use.
The 2SA1020-Y is an effective choice for many signal processing and power supply applications. Its high gain, low saturation voltage, and low power dissipation make it an ideal choice for general-purpose applications, as well as for low-power systems. Additionally, its low profile package and ability to operate at very low temperatures make it a dependable choice for long-term use.
The specific data is subject to PDF, and the above content is for reference
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