2SA1837,TOA1F(J Allicdata Electronics
Allicdata Part #:

2SA1837TOA1F(J-ND

Manufacturer Part#:

2SA1837,TOA1F(J

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 1A 230V TO220-3
More Detail: Bipolar (BJT) Transistor PNP 230V 1A 70MHz 2W Thro...
DataSheet: 2SA1837,TOA1F(J datasheet2SA1837,TOA1F(J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS
Description

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2SA1837 and TOA1F (J are two bipolar junction transistors (BJT) that can be used in a wide range of applications, particularly those that require high-voltage and high-current capabilities. While both transistors have the same basic characteristics, they differ in the way they are used and their application fields. This article provides an overview of their working principle and application fields.

2SA1837

The 2SA1837 is an NPN epitaxial transistor designed for use in a variety of high-voltage and high-power applications. It is suitable for use in applications that require high currents, such as motor control and high-power switches. It features a good switching time, low saturation voltage, good gain uniformity, and wide frequency response. It has a Pd of 150W, a mW of 10V, a Tc of 150°C, and a maximum DC current gain (hfe) of 1050.

TOA1F(J

The TOA1F(J is an NPN bipolar junction transistor that is designed for use in a variety of audio and switching applications. It features low saturation voltage, wide frequency response, and good gain uniformity. It has a Pd of 30W, a mW of 8V, a Tc of -40°C, and a maximum DC current gain (hfe) of 400. It is suitable for use in Class A, B and AB audio amplifiers, as well as switching circuits.

Working Principle

Both the 2SA1837 and TOA1F(J transistors use the same basic working principle. They both use a semiconductor material as the base to provide a medium for the movement of electrons from the emitter to the collector. When a small current is applied to the base, the electrons will start to move, creating a larger current at the collector. This larger current can then be used as an amplifier or to control a circuit. The transistors are also polarized, meaning that they can only handle currents in one direction.

Application Field

The 2SA1837 and TOA1F(J transistors can be used in a variety of applications. The 2SA1837 is particularly well-suited for high-power and high-voltage applications, such as motor control and high-power switches. The TOA1F(J on the other hand, is well-suited to audio and switching applications, such as Class A, B, and AB audio amplifiers and switching circuits.

Conclusion

The 2SA1837 and TOA1F(J are two bipolar junction transistors (BJT) that can be used in a wide range of applications. While they differ in their applications, they both use the same basic working principle and feature good switching time, low saturation voltage, good gain uniformity, and wide frequency response. The 2SA1837 is ideal for high-voltage and high-power applications, while the TOA1F(J is ideal for audio and switching applications.

The specific data is subject to PDF, and the above content is for reference

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