2SA1978-A Allicdata Electronics
Allicdata Part #:

2SA1978-A-ND

Manufacturer Part#:

2SA1978-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR PNP SOT-23
More Detail: RF Transistor PNP 12V 50mA 5.5GHz 200mW Surface Mo...
DataSheet: 2SA1978-A datasheet2SA1978-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Strip
Part Status: Obsolete
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2dB @ 1GHz
Gain: 10dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: --
Description

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The 2SA1978-A transistor is a versatile type of bipolar, or junction transistor, which is most commonly used as an RF (radio frequency) device in many types of circuits and applications. It has a variety of uses in radio, audio and other types of circuits, making it one of the most popular transistors for use in designs.

It is a planar transistor, which means that the different regions of the transistor are arranged in a flat, planar pattern. This helps improve its performance as well as its efficiency. The 2SA1978-A is also a PNP type device, which means that it has a positive drain lead with a negative gate lead and a positive source lead. This type of transistor is typically used for applications where a low input signal level is needed, but a high output is desired.

This transistor is typically used in RF applications such as radio receivers and transmitters. It can also be used in audio circuits as a voltage amplifier or in other amplifier applications. In RF applications, the 2SA1978-A is used as a common emitter amplifier or as a common base amplifier. These applications require a high gain device, as the transistor will be used to amplify very small signals from a receiver or transmitter.

The transistor has a power dissipation of 1.5 watts, a collector-emitter voltage of 30 volts and a collector-base voltage of 45 volts. It also has a maximum collector current of 0.6 amps and a collector dissipation of 0.9 watts. The device also has a high frequency response of up to 200 MHz, which makes it suitable for many high frequency applications, such as FM broadcasts.

This transistor usually requires a large amount of bias to work correctly, as the gain of the device is dependent on the amount of current flowing through it. The transistor also requires protection from static electricity and excessive temperatures. Additionally, the transistor must be mounted correctly to ensure it is properly cooled and that it is not exposed to dust.

The working principle of the 2SA1985-A is based on the principle of transistor action. A current passing through the transistor will trigger the collector current, which will flow through the drain, source and base of the transistor. This current will then cause a voltage to be created between the collector and the emitter, and this voltage will then be amplified due to the fact that the transistor also has a gain. The amount of gain will depend on the amount of current passing through the transistor.

The 2SA1978-A is a useful device for a variety of RF and audio applications. Its high power dissipation, high current capability and high frequency response make it an ideal choice in many applications. Additionally, the device has a high gain and requires less bias than other types of transistors, which makes it a great choice for many applications where a low input voltage but a high output is desired.

The specific data is subject to PDF, and the above content is for reference

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