2SA1593S-TL-E

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The 2SA1593S-TL-E is an NPN bipolar junction transistor featured in the TO-263 package. It is packaged in the industry standard TO-263 package, which makes it an ideal device for a wide range of applications. It is suitable for use as a load switch, as a linear driver and for amplifier circuits, as well as for general purpose switching applications. As a bipolar junction transistor (BJT), this device divides both small and large signals. It features a high collector-emitter breakdown voltage, with a gain bandwidth product of 250MHz.

Features

• High operating temperature range (-55°C to 150°C)
• High collector-emitter breakdown voltage of up to 250V
• Low saturation voltage (Vce(sat)) of 0.8 V
• High gain bandwidth product of 250MHz
• Low noise figure (-55dB)

Application

The 2SA1593S-TL-E is designed for use in a variety of applications including data acquisition systems, motor control systems, power supply switching and amplifier circuits. Due to its high gain bandwidth product, the 2SA1593S-TL-E is especially suitable for use as a driver for differential pairs and for amplifier circuits. It can also be used for general purpose switching applications, such as load switches or actuators.

Working Principle

As a bipolar junction transistor, the 2SA1593S-TL-E is a three-terminal device composed of two p-type and one n-type semiconductor regions. The collector, base and emitter terminals are connected to the corresponding semiconductor regions. The base-emitter junction is referred to as a “forward biased” p-n junction and the current flow between the collector and the emitter is known as the collector current, Ic. The magnitude of the collector current is dependent upon the current flowing through the base-emitter junction, known as the base current, Ib, which is controlled by a small current passed through the base terminal. This small current controls the larger current flow, which is responsible for the functioning of the transistor. The amplification factor, A, of the 2SA1593S-TL-E is typically 250.

When the base-emitter junction is “reverse biased”, there is no current flow between the collector and the emitter. This condition is referred to as off-state. When the base-emitter junction is forward biased, current starts to flow through the base terminal to the emitter and collector terminals, resulting in current flow between the collector and the emitter, known as the on-state. This on-state current is known as the collector current (Ic).

The 2SA1593S-TL-E offers a high voltage breakdown of 250V, which is suitable for applications that require high voltage operation. The device features a high gain bandwidth product of 250MHz, allowing it to operate over a wide range of frequencies. The low saturation voltage of 0.8V ensures that the device is able to operate in both low- and high-voltage applications.

Conclusion

The 2SA1593S-TL-E is a NPN bipolar junction transistor that is packaged in the industry standard TO-263 package. It offers a high voltage breakdown of 250V and a gain bandwidth product of 250MHz, making it suitable for use in a wide range of applications. Due to its low saturation voltage of 0.8V, it is suitable for both low- and high-voltage applications, such as data acquisition systems, motor control systems, power supply switching and amplifier circuits. It is also suitable for use as a load switch and for general purpose switching applications.

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