Allicdata Part #: | 2SA1761T6F(J-ND |
Manufacturer Part#: |
2SA1761,T6F(J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 3A 50V TO226-3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 3A 100MHz 900mW T... |
DataSheet: | 2SA1761,T6F(J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 75mA, 1.5A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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The 2SA1761,T6F(J is a high-voltage, high-current, high-power, high-gain transistor in the category of Transistors - Bipolar (BJT) - Single. It is a NPN-type transistor that is particularly suitable for use in audio amplifiers and power supplies, as well as other applications that require high current, such as motor control and switching control.
The 2SA1761,T6F(J features a maximum collector-emitter current of 10A and an operating temperature of -55 to +150 degrees Celsius. It also has a wide range of collector-emitter voltages, from -400 to -600V. The 2SA1761,T6F(J has an excellent gain bandwidth product, allowing it to deliver high performance with low power consumption.
The 2SA1761,T6F(J is a popular choice for a variety of applications due to its high-power, high-current capabilities and excellent gain bandwidth product. It is commonly used in high-power audio amplifiers, high-current power supplies, motor control, and switching applications. In addition, it is also well-suited for use in various radio transmission applications.
The 2SA1761,T6F(J is a NPN-type bipolar transistor, which means that the current flows from the collector to the emitter when the base current is externally supplied. The base current controls the collector current, and the collector current controls the emitter current. The gain of the transistor is determined by the ratio of the emitter current to the base current. The 2SA1761,T6F(J has a large current gain and is capable of handling large currents, making it particularly suitable for use in high-current applications.
The 2SA1761,T6F(J can be used in either audio amplifier or power supply applications. It is well-suited for use in high-power audio amplifiers since it has a large current gain and low power consumption. It is also an ideal choice for use in power supply applications due to its high-power, high-current capabilities. In addition, it is also well-suited for use in various radio transmission applications.
In summary, the 2SA1761,T6F(J is a high-voltage, high-current, high-power, high-gain transistor in the category of Transistors - Bipolar (BJT) - Single. It is particularly suitable for use in audio amplifiers and power supplies, motor control, and switching control applications due to its high-power, high-current capabilities and excellent gain bandwidth product.
The specific data is subject to PDF, and the above content is for reference
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