Allicdata Part #: | 2SA1680(FM)-ND |
Manufacturer Part#: |
2SA1680(F,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 2A 50V TO226-3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T... |
DataSheet: | 2SA1680(F,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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The 2SA1680 is the pnp type of a dual integrated silicon transistor. It is often used in devices such as pallet types and power-control circuits. It is composed of two separate transistors and has an F and M pin arrangement. The 2SA1680 is a high powered transistor, suitable for power amplifier and other power control applications.
A transistor is an active semiconductor device that acts as an amplifier or a switch. A transistor can control the current or voltage between two different circuits. Transistors are classified into two main types, depending on their ability to control current. The first type are bipolar junction transistors (BJTs) which are composed of two semiconductor layers and can control significant current levels. The second type are field-effect transistors (FETs) which are composed of three semiconductor layers and can control only small currents or voltages.
The 2SA1680 is a single bipolar junction transistor (BJT) and is one of the few high-power transistors available. It is used in power amplifier and power control applications. The 2SA1680 is composed of two transistors on a single integrated silicon body and features an F and M pin arrangement. The “F” pin is the collector and the “M” pin is the emitter. The power amplifier circuit typically uses a voltage source, such as a battery, to power the transistor. When the voltage source is applied to the collector, the current flows from the emitter and is amplified by the transistor. The amount of current that is amplified depends on the current between the collector and the emitter, and the voltage of the voltage source.
The 2SA1680, because of its high power capability, is suitable for a range of power amplifier applications, including portable audio amplifiers, pallet types, and power-control circuits. It has an excellent voltage gain, allowing it to amplify power efficiently. It also has high-speed switching and very low saturation voltage. This makes it ideal for rapid switching operations with minimal voltage drop across the transistor.
The 2SA1680 is widely used in high power amplifier applications such as amplifiers in portable audio systems or power amplifiers in broadcast systems. It can also be used in other applications such as motor control, switching circuits, and high current drive circuits. Its high power capability, excellent voltage gain, and low saturation voltage make it an excellent choice for these applications.
In conclusion, the 2SA1680 is an excellent transistor for a range of high power applications, such as power amplifiers, pallet types, and power-control circuits. It offers high power capability and excellent voltage gain, making it ideal for power amplifier applications. Additionally, it is highly reliable and can be used for a variety of medium power applications.
The specific data is subject to PDF, and the above content is for reference
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