2SA1721RTE85LF Allicdata Electronics
Allicdata Part #:

2SA1721RTE85LFTR-ND

Manufacturer Part#:

2SA1721RTE85LF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 300V 100MA TO236-3
More Detail: Bipolar (BJT) Transistor PNP 300V 100mA 50MHz 150m...
DataSheet: 2SA1721RTE85LF datasheet2SA1721RTE85LF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Power - Max: 150mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Description

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The 2SA1721RTE85LF is one of the most well-known transistors in the Bipolar Junction Transistor (BJT) family, particularly in the Single branch of the BJT family. It is commonly used for applications that require strong linear currents with low noise emissions, such as power amplifiers, DC-DC converters, or voltage regulators.But what exactly does this transistor do in terms of how it works, and where does it fit in the general scheme of things when it comes to Bipolar Junction Transistors? Let\'s take a closer look.

The 2SA1721RTE85LF is a PNP transistor, which means that it transfers electrical power from the collector to the emitter when it is in the “on” state. The way this happens is through a “current gain” effect. Basically, when a small amount of current is applied to the base of the transistor, a much greater amount of current is released through the collector and the emitter.

This “current gain” effect, also known as “amplification”, is one of the most sought-after characteristics of BJTs and is why they are so widely used in a variety of applications. In the case of the 2SA1721RTE85LF, the amplifier gain is usually between 250 and 500, which makes it ideal for use in audio classification and distortion circuits, for example. In addition, the 2SA1721RTE85LF has a low noise rate, which further adds to its usefulness in many audio applications.

The 2SA1721RTE85LF transistor is also widely used in switching circuits, due to its high switch speed and low impedance, both of which allow it to be used in power supply and motor control circuits. Furthermore, the 2SA1721RTE85LF is known to have a very low “on” resistance, which makes it ideal for use in circuits that require high current with low voltage fluctuations. This low “on” resistance also makes the 2SA1721RTE85LF perfect for use in current sensing and voltage sensing circuits, such as in automotive applications.

Finally, the 2SA1721RTE85LF is also known for its high breakdown voltage. This allows the transistor to handle voltages up to 60V, which is another factor that makes the 2SA1721RTE85LF the popular choice for many DC-DC converters, power amplifiers, and voltage regulators.

In summary, the 2SA1721RTE85LF is one of the most popular transistors in the Single BJT family. It is typically used in applications that require strong linear currents with low noise emissions, such as power amplifiers, DC-DC converters and voltage regulators. Furthermore, it also has a very low “on” resistance, a high amplifier gain, a low switch speed and a high breakdown voltage, which makes it suitable for use in current sensing and voltage sensing applications, as well as in switching circuits.

The specific data is subject to PDF, and the above content is for reference

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