
Allicdata Part #: | 2SA1312GRTE85LFTR-ND |
Manufacturer Part#: |
2SA1312GRTE85LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 120V 0.1A S-MINI |
More Detail: | Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | S-Mini |
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The 2SA1312GRTE85LF belongs to BJT (Bipolar Junction Transistors) Single family, which is primarily designed as an amplifier. It is a multi-purpose PNP Transistor, which is equipped with low noise, high gain, and high input impedance. This type of device is typically used in preamplifier, amplifier, and VDRM driver applications. It has a wide range of uses and applications, such as in audio circuits, linear and quality control circuits, switching circuits, and more.
The 2SA1312GRTE85LF is composed of three components: a collector, an emitter and a base. When a voltage is applied to the base terminal. This voltage causes current to flow from the collector to the emitter. The base current is amplified and is proportional to the voltage applied to the base. This is known as the transistor’s amplification factor.
The gain of the transistor depends on two factors: the collector current and the base current. The ratio of the collector current to the base current is known as the gain of the device. The gain is determined by the surrounding components, such as resistors and capacitors. Depending on the values of these components, the gain of the transistor can be adjusted.
Another important factor in determining the transistor’s gain is its junction voltage. The junction voltage of the 2SA1312GRTE85LF is 0.85 volts, meaning that the collector current must be 0.85 volts greater than the base current. This means that the higher the base current, the higher the collector current, consequently increasing the gain of the transistor.
The 2SA1312GRTE85LF has a high power dissipation rate of 1W, making it suitable for applications that require higher power input. The thermal resistance is also relatively low, making it suitable for power amplification applications.
Overall, the 2SA1312GRTE85LF is suitable for various applications, from amplifier, preamplifier, and VDRM driver applications, to linear and quality control circuits and audio circuits. Its high input impedance, low noise and high gain make the 2SA1312GRTE85LF an excellent choice for any application.
The specific data is subject to PDF, and the above content is for reference
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