Allicdata Part #: | 2SA1162S-GRLF(D-ND |
Manufacturer Part#: |
2SA1162S-GR,LF(D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANSISTOR PNP 50V 150MA S-MINI |
More Detail: | Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 150mW... |
DataSheet: | 2SA1162S-GR,LF(D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 2mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | S-Mini |
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2SA1162S-GR,LF is a single bipolar junction transistor (BJT) which is a three-terminal electronic component featuring an emitter, a base and a collector. Bipolar junction transistors work by using an electric current flow from the emitter to the collector to control the output current. The current flowing from the base to the emitter is known as the base current and this enables current flow from the collector to the emitter. This means the transistor can be used to switch between two different voltage levels by varying the amount of base current.
The 2SA1162S-GR,LF transistor is used in a variety of applications due to its high current gain and low voltage drive requirements. It is commonly used in audio and video equipment, amplifiers, low noise amplifiers, oscillators, comparators and converters. Additionally, the device is also used in speed controllers, logic circuits, embedded multivibrators and motor control circuits. In power supply circuits, the device can be used to control motor speed and to regulate and stabilize the output voltage.
The 2SA1162S-GR,LF has a high current gain of 550, a collector-base voltage of 30V and a collector-emitter voltage of 50V. The device is able to withstand up to 2A of collector current, which makes it ideal for a variety of applications. The transistor is rated for PNP, meaning the device can be used to switch between two distinct voltage levels. The device is available in both Leadless-form and through-hole form making it desirable for many different applications.
The 2SA1162S-GR,LF is a PNP, NPN, and TTL compatible transistor which uses two separate transistors that work together to complete switching operations. When the base voltage is increased, it turns the PNP transistor OFF allowing the NPN transistor to take over. By increasing the base voltage again, the NPN transistor will be turned ON and the PNP transistor will be turned OFF again. This process is known as complementary switching.
The device also features a very low voltage drop of 0.7V which allows it to handle a wide range of or load currents. The 2SA1162S-GR,LF is also able to provide an output current of 500 mA and a maximum power dissipation of 1.2W. This makes the device suitable for many different power applications. Additionally, the device is highly reliable due to its manufacturing process.
The 2SA1162S-GR,LF is an excellent choice for applications that require switching between two different voltage levels with low levels of noise. The device can also be used in a variety of other applications, such as in power supplies, motor controllers and logic circuits. Its high current gain, low operating voltage and high reliability make it a desirable choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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