2SA1162S-Y, LF(D Allicdata Electronics

2SA1162S-Y, LF(D Discrete Semiconductor Products

Allicdata Part #:

2SA1162S-YLF(DTR-ND

Manufacturer Part#:

2SA1162S-Y, LF(D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 50V 0.15A S-MINI
More Detail: Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 150mW...
DataSheet: 2SA1162S-Y, LF(D datasheet2SA1162S-Y, LF(D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Base Part Number: 2SA1162
Description

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2SA1162S-Y, LF(D application fields and working principles are used in several areas of the electronics industry, from consumer electronics to automotive. In the automotive sector, these transistors are commonly employed in applications involving power drives and in engine control modules.

The 2SA1162S-Y, LF(D is a type of bipolar (BJT) single transistor, a three-terminal device that amplifies or controls current. It is typically composed of emitter, base and collector layers made of semiconductor material, usually silicon, germanium or gallium arsenide. In the presence of a forward-biased emitter-base junction, electrons are injected from the emitter into the base region, which increases the current flow. This creates what is referred to as an “inversion layer”, allowing current to flow between the collector and the base.

The working principles of 2SA1162S-Y, LF(D are that it uses two different “currents”, also known as its input and output currents. The input current, known as Ib, is the current flowing from the base to the emitter. The output current, Ic, is the current from the collector to the emitter. These two currents are related by a ratio, which is referred to as the “beta” ratio. This ratio is given by the following formula: Beta = Ic/Ib. Transistors usually have a Beta, or gain, ranging from 10 to 200.

The 2SA1162S-Y, LF(D is typically used in current-amplifying circuits and applications where low noise gain is desirable. It can also be employed as a current regulator in DC power supplies and as protection against over-corrections. In the automotive industry, these transistors are commonly used in applications involving engine control modules, power drives, and other control systems, such as speed control and engine braking.

The 2SA1162S-Y, LF(D also finds applications in consumer electronics and medical equipment, where precise current-sensing circuitry is required. This device is also popular for use in consumer audio amplifiers, where its high frequency characteristics make it ideal for high-fidelity music reproducing applications.

In conclusion, the 2SA1162S-Y, LF(D is a type of bipolar (BJT) single power transistor with a wide range of applications ranging from consumer electronics to automotive. It is commonly used in current-amplifying circuits and applications where low noise gain is desirable, and in the automotive industry, these transistors are commonly used in applications involving engine control modules, power drives, and other control systems. It can also be used in consumer electronics, medical equipment, and audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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