2SA1179N6-TB-E Allicdata Electronics
Allicdata Part #:

2SA1179N6-TB-E-ND

Manufacturer Part#:

2SA1179N6-TB-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 0.15A CP
More Detail: Bipolar (BJT) Transistor PNP 50V 150mA 180MHz 200m...
DataSheet: 2SA1179N6-TB-E datasheet2SA1179N6-TB-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Power - Max: 200mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP
Description

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The 2SA1179N6-TB-E is a high-performance transistor which is ideal for use in power amplifier and switching applications. The device operates in a bipolar configuration, with a high transconductance and current gain. With high collector current and a high maximum collector-to-emitter voltage, the 2SA1179N6-TB-E offers excellent performance for the design of power amplifiers and power switches.

The 2SA1179N6-TB-E’s major applications include driving audio power amplifiers, power rectifiers, and motor control circuits. Its high voltage and current capabilities make it suitable for a range of operational conditions. The device has also been successfully used in motor control, light dimming, buck switching, and DC-DC converter applications.

The working principle of the 2SA1179N6-TB-E can be summarised as the controlling of current flow by turning the collector-to-emitter voltage on and off in response to an input voltage. The input voltage is applied to the base of the resistor, which allows current to flow from its emitter to its collector; the current flow can be controlled by increasing or decreasing the input voltage. The collector-to-emitter voltage, in turn, is used to control the current flow from the collector to the emitter. The 2SA1179N6-TB-E is usually operated in the saturated mode. The saturation mode allows the transistor to operate at a reduced cost and with a greater efficiency; the overall operation of the device is determined by the input voltage, the current gain of the transistor, and the reference resistor.

The 2SA1179N6-TB-E provides high power and voltage protection, excellent frequency response and long life. The device is a reliable, cost effective alternative to linear power amplifiers and can be used in a wide range of switching applications. Its features make it an ideal choice for power amplifier and switching requirements and its fast response time allows it to maintain a high level of performance in a wide range of conditions.

The 2SA1179N6-TB-E is an excellent choice of transistor for a range of applications as it offers a high level of performance and exceptional reliability. Its wide range of applications make it a perfect solution for designers who require a reliable, cost effective transistor for power amplifiers, power switches and motor control circuits.

The specific data is subject to PDF, and the above content is for reference

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