2SA1309ARA Allicdata Electronics
Allicdata Part #:

2SA1309ARATB-ND

Manufacturer Part#:

2SA1309ARA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 50V 0.1A NS-B1
More Detail: Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 300mW...
DataSheet: 2SA1309ARA datasheet2SA1309ARA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 300mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1
Base Part Number: 2SA1309
Description

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2SA1309ARA Application Field and Working Principle

The 2SA1309ARA is a bipolar/junction transistor (or BJT) designed for use in applications involving voltage and power. It is a single BJT with a wide range of features, including low voltage operation, high current gain and low thermal resistance.

The 2SA1309ARA is mainly used in applications where low voltage operation and handling of high currents are required. It is suitable for use in amplifiers, motor control, switching circuits, power supplies, and many other applications.

One of the main characteristics of the 2SA1309ARA is its low voltage operation. This allows it to be used in applications that require operation at a lower voltage than what is possible with standard BJTs. It also has a high current gain which means it can handle higher current levels than other BJT transistors.

The working principle of the 2SA1309ARA is based on the ability of a BJT to pass current through two junctions. The emitter junction passes holes (positive charge carriers) from the emitter to the base region and the collector junction passes electrons (negative charge carriers) from the base to the collector. This allows for current to flow between the base and the collector, and the amount of current passing through depends on the voltage applied at the base.

The current flow produces a voltage drop across the resistor connected in the base-emitter circuit, which lowers the voltage at the base region. This voltagedrop is the voltage drop that determines the amount of current that passes through the transistor. As the voltage applied to the base increases, the amount of current passing through the transistor increases, resulting in an increase in the collector current.

The 2SA1309ARA also has a low thermal resistance which helps keep it cooler when used in high current applications. This is due to its small size and being able to dissipate heat easier than larger transistors. With its high current gain and low voltage operation, the 2SA1309ARA is an ideal choice when it comes to dealing with large currents in small packages.

In summary, the 2SA1309ARA is a single BJT transistor with a wide range of features. It is suitable for applications where high current gain and low voltage operation are needed. Its low thermal resistance also helps keep it cooler when dealing with large currents. With its features and capabilities, the 2SA1309ARA is an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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