
Allicdata Part #: | 2SA1313-YLFTR-ND |
Manufacturer Part#: |
2SA1313-Y,LF |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 50V 0.5A SMINI |
More Detail: | Bipolar (BJT) Transistor PNP 50V 500mA 200MHz 200m... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 0.03804 |
6000 +: | $ 0.03308 |
15000 +: | $ 0.02812 |
30000 +: | $ 0.02646 |
75000 +: | $ 0.02481 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 1V |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | S-Mini |
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2SA1313-Y,LF Application Field and Working Principle
A 2SA1313-Y,LF transistor is a type of bipolar junction transistor (BJT) commonly used for a variety of electronic applications. The 2SA1313-Y,LF is classified based on its single-type configuration, meaning it consists of one emitter, base and collector and so on. This device is typically used as an amplifier in digital systems, as it can provide amplification of signals along with switching functions.
The 2SA1313-Y,LF consists of a pair of doped silicon semiconductor devices, one p-doped and the other n-doped. These materials are joined together to form a PN junction, which acts as the transistor switch. In its off state, the PN junction does not allow current to flow and the transistor is in an off condition. When current flows into the base of the transistor, it causes a voltage drop across the junction, allowing current to flow through the collector and emitter of the device.
The working principle of the 2SA1313-Y,LF can be further divided into two basic categories: the common emitter amplifier and the switching application. In the common emitter amplifier, the voltage potential at the base (Vbase) is lower than the potential at the emitter (Vemitter). This causes a current to flow through the transistor, which induces a gain in the output voltage at the collector (Vcollector). The gain of the amplifier is determined by the ratio of Vcollector to Vbase.
In switching applications, the voltage at the base is either switched high or low allowing current to flow either through or around the transistor. This can be used to control the flow of current through a circuit in a digital logic application. A common example of this is the use of 2SA1313-Y,LF transistors as flip-flops in digital logic systems.
The 2SA1313-Y,LF is a highly reliable and versatile type of transistor, with a wide range of applications. The device is capable of working in either high or low power modes, which make it suitable for use in commercial applications. It is also capable of operating over a wide range of temperatures, making it ideal for use in many types of industrial and automotive systems.
In summary, the 2SA1313-Y,LF is a single bipolar junction transistor, commonly used as an amplifier or switch in digital circuits. It is a highly reliable and capable device, and due to its wide range of operational capabilities is suitable for many types of applications. The working principle and operating parameters of the device must be clearly understood before using it in any application.
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