
Allicdata Part #: | 2SA1381DSTU-ND |
Manufacturer Part#: |
2SA1381DSTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 300V 0.1A TO-126 |
More Detail: | Bipolar (BJT) Transistor PNP 300V 100mA 150MHz 7W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 10V |
Power - Max: | 7W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
Base Part Number: | 2SA1381 |
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The 2SA1381DSTU is an NPN transistor manufactured by Sanyo. It is a popular part used in many consumer and industrial electronics applications. It is commonly used for switching applications, amplifier stages, and timing circuits. This transistor is characterised by its high-Current and low-Power dissipation capabilities.
This transistor is a single Bipolar Junction Transistor (BJT). This type of transistor is made up of three layers of doped silicon material. The outer layers form the "emitter" and "collector" while the middle layer, which is the shared layer, is known as the "base". When current is passed through the base, a voltage potential is established between the collector and emitter, thereby allowing current to pass between the two.
2SA1381DSTU has a max collector current rating of 1.5A and a max collector-emitter voltage of 80V. The max emitter-base voltage is 6V while the max collector-base voltage is 80V. The max dispersion power is 500mW, while the max junction temperature is 150°C. The 2SA1381DSTU has a wide range of operating temperatures, from -25°C to 125°C.
2SA1381DSTU is commonly used for general switching applications, amplifier stages, and timing circuits. Since the 2SA1381DSTU has a high current rating and low power dissipation capabilities, it is an excellent choice for applications that require low power consumption. It is also suitable for applications that require reliable and high-speed switching such as PWM motor control, DC to DC switching, and logic control.
The working principle of the 2SA1381DSTU is based on the movement of electrons in a semiconductor material. When a voltage is applied, a current is allowed to flow through the base region. This current creates a potential between the collector and emitter, allowing current to flow between them. The NPN transistor is normally in the "off" state, but switching on the base current causes the transistor to switch to the "on" state, allowing a current flow between the collector and emitter.
2SA1381DSTU is an efficient, cost-effective, and reliable transistor for various switching applications. It is widely used in consumer electronics, industrial control systems and many other applications. With its high-current, low-power dissipation, and wide range of operating temperatures, the 2SA1381DSTU is an ideal choice for many applications.
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