2SA1419S-TD-E

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1.5A
Voltage - Collector Emitter Breakdown (Max):	160V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 5V
Power - Max:	500mW
Frequency - Transition:	120MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PCP
Base Part Number:	2SA1419

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Introduction to 2SA1419S-TD-E

The 2SA1419S-TD-E is a type of NPN through-hole transistor. It belongs to the bipolar junction transistor, or BJT, family, specifically the single transistors line. This particular device is designed to deliver high-speed switching and low power consumption. It is also suitable for use in applications that require low-voltage and low-power dissipation operation.

Key Features of 2SA1419S-TD-E

The 2SA1419S-TD-E offers a variety of key features and benefits. Here are some of its main specifications:

• Collector-to-Emitter Voltage Rating – 500 V
• Collector-to-Base Voltage – 500 V
• Power Dissipation – 0.2 W
• Base-to-Emitter Voltage – 5 V
• Max Maximum Operating Temperature – 150 °C
• Collector Current – 150 mA
• Transition Frequency – 100 MHz
• Package / Case – 120

These features make the 2SA1419S-TD-E suitable for a range of applications, such as low-noise amplifiers, power switching, and general-purpose switching.

2SA1419S-TD-E Application Fields and Working Principle

The 2SA1419S-TD-E is used primarily in low-noise amplifier and power switching applications, as well as general-purpose switching operations. This transistor is built using an NPN bipolar structure, and it operates using a Collector-Base, Collector-Emitter and Base-Emitter voltage. The Collector-Base junction is an area where the Base, or input, semiconductor layer is forward biased against the Collector, or output, semiconductor layer. This junction allows the signal to be transferred from the Base to the Collector layer. The Collector-Emitter junction works in a similar manner, with the Collector semiconductor layer forward biased against the Emitter semiconductor layer. Together, both junctions are used to switch or amplify signal from the input to the output. The Base-Emitter junction is also a forward-biased junction, where the Base semiconductor layer is connected to the Emitter semiconductor layer. This junction is used to control the amount of current transferred between the input and output layers.

Conclusion

The 2SA1419S-TD-E is an ideal choice for low-noise amplifiers and power switching applications, as well as general-purpose switching operations. With its low power dissipation and high-speed switching capabilities, this BJT transistor is a reliable choice for any application requiring low-voltage operation. This article has outlined the key features of the 2SA1419S-TD-E, as well as discussed its application fields and working principle.

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