2SA1425-Y,T2F(J Allicdata Electronics
Allicdata Part #:

2SA1425-YT2F(J-ND

Manufacturer Part#:

2SA1425-Y,T2F(J

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 800MA 120V SC71
More Detail: Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 1W ...
DataSheet: 2SA1425-Y,T2F(J datasheet2SA1425-Y,T2F(J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM
Description

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The 2SA1425-Y,T2F(J transistor is a type of bipolar junction transistor (BJT) specifically classified as a single transistor. Generally, BJTs are three-terminal semiconductor devices that are used to amplify or switch electrical signals. Among the different devices classified as BJTs, single transistors, namely those comprising of three terminals, are the most basic type.

The 2SA1425-Y,T2F(J is an NPN-type single transistor featuring a collector current of 500mA, a DC current gain of 160, and a peak gain of 500 or higher. The device is available in three packages, namely TO-92, SOT-223, and SOT-236. Created by RoHS-compliant CMOS processes, the single transistor offers low power dissipation values, making it ideal for use in portable electronics.

In terms of application field, the 2SA1425-Y,T2F(J device is often used in audio and power amplification circuits. It\'s also used as a switched output transistor for AC fans, as well as a low frequency/power output transistor in portable electronic devices such as mobile phones, PDAs and similar gadgets. The device is also commonly employed in automotive applications and industrial automation circuits.

In terms of working principle, the 2SA1425-Y,T2F(J transistor is like all other BJTs, wherein it mainly consists of two back-to-back diodes between its emitter and collector terminals. When current flows through the emitter-base junction, a larger current is formed at the collector due to the principle of current gain. This amplified current can then be used to power an additional circuit for various switching or amplification functions.

Due to the low power dissipation characteristics of the 2SA1425-Y,T2F(J, the device is often favored for its higher power efficiency compared to other devices. This feature makes it suitable for portable electronics and other applications where power consumption needs to be kept at a minimum. The device has a high operating temperature range (up to 175°C) and offers good noise immunity, which is why it is widely used in automotive and industrial applications.

In summary, the 2SA1425-Y,T2F(J is a single transistor belonging to the bipolar junction transistors category specifically designed for use in portable electronics, audio amplification, power amplification and other similar applications. Featuring a collector current of 500mA and a DC current gain of 160, it offers low power consumption as well as a high operating temperature range and good noise immunity, allowing it to be used in automotive and industrial automation circuits as well.

The specific data is subject to PDF, and the above content is for reference

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