| Allicdata Part #: | 2SA1488-ND |
| Manufacturer Part#: |
2SA1488 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Sanken |
| Short Description: | TRANS PNP 80V 4A TO220F |
| More Detail: | Bipolar (BJT) Transistor PNP 80V 4A 15MHz 25W Thro... |
| DataSheet: | 2SA1488 Datasheet/PDF |
| Quantity: | 214 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 4A |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max): | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 1A, 4V |
| Power - Max: | 25W |
| Frequency - Transition: | 15MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
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2SA1488 is a single bipolar junction transistor (BJT) designed for general-purpose switching and low-noise amplifier applications. It is manufactured using a higher gain epitaxial base structure for better performance and features a wide dynamic range. The 2SA1488 also has higher power dissipation and current ratings than many other BJTs. The device is also rated to operate at supply voltages of up to 40 V and currents up to 4 A.
In general, the 2SA1488 is well-suited for switching and low-noise amplifier applications. It has a wide dynamic range and exhibits a higher gain epitaxial base structure for better performance. The device has higher power dissipation and current ratings than many other BJTs, making it suitable for more demanding industrial applications.
The 2SA1488 works on the principle of a bipolar junction transistor, in which two doped semiconductor layers (base and emitter) are separated by a thin layer of insulating material (the base-collector junction layer). When a forward voltage is applied to the base-emitter junction, electrons from the base layer flow into the emitter layer, forming a conductive path between them. This “on-state” is maintained until the base voltage is reduced below a certain value, at which point the transistor is considered “off”. A collector-emitter voltage (Vce) is necessary to maintain the “on” state. In this way the 2SA1488 is used to control the flow of current between two electrodes.
Because of its structure, the 2SA1488 is ideal for applications requiring high gain, low noise and very low current consumption. It is also ideal for applications requiring precise control of current (such as modulators, frequency converters and regulators). As such, it can be used in a wide variety of applications, including amplifiers, switching circuits, medical equipment, telecommunication systems and automotive electronics.
In addition to its high gain, low noise and low current consumption, the 2SA1488 transistor also has several other advantages. It has a wide dynamic range and exhibits low saturation voltage and low noise figure, making it suitable for use in low voltage applications. The device is resistant to radiation and is also insensitive to temperature changes, making it suitable for use in extreme conditions. Finally, it has a very low base-emitter junction capacitance, making it ideal for use in high-frequency and RF applications.
To summarize, the 2SA1488 is a single bipolar junction transistor (BJT) designed for general-purpose switching and low-noise amplifier applications. It is manufactured using a higher gain epitaxial base structure for better performance and features a wide dynamic range. The device is rated to operate at supply voltages of up to 40 V and currents up to 4 A and is well-suited for applications requiring high gain, low noise and very low current consumption. It is also resistant to radiation and is insensitive to temperature changes, making it suitable for use in extreme conditions. The 2SA1488 transistor is suitable for use in a wide variety of applications, including amplifiers, switching circuits, medical equipment, telecommunication systems and automotive electronics.
The specific data is subject to PDF, and the above content is for reference
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2SA1488 Datasheet/PDF