Allicdata Part #: | 2SA1515STPQ-ND |
Manufacturer Part#: |
2SA1515STPQ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 32V 1A SPT |
More Detail: | Bipolar (BJT) Transistor PNP 32V 1A 150MHz 300mW T... |
DataSheet: | 2SA1515STPQ Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 32V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 3V |
Power - Max: | 300mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SC-72 Formed Leads |
Supplier Device Package: | SPT |
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2SA1515STPQ is a single-ended high-voltage P-channel power MOS transistor with a voltage rating of 600V and a drain current rating of 5A. It is a type of BJT (bipolar junction transistor) that works as a switch and amplifier in many electronic circuits. The 2SA1515STPQ is also known as a field-effect transistor, as it relies on an electric field to control current flow.
The 2SA1515STPQ is mainly used as a load switch in a variety of applications ranging from automotive electronics to power management. It is also used as an amplification device in audio applications and as a switch in digital circuits, such as CMOS logic gates, i.e. as a power MOSFET.
The main limitation of 2SA1515STPQ is its low gain, due to its p-channel construction. The max gain is about 1. Additionally, it has a low breakdown voltage and is not suitable for high-speed switching applications.
The 2SA1515STPQ is usually fabricated in a dual die package, which is made up of two separate dies connected through a gold bonding wire. This allows the separate dies to have different capacitances, enabling it to be used in multiple applications.
The basic working principle of 2SA1515STPQ is simple. When a current is applied to the Gate/Base terminal, it creates a potential difference across the transistor’s Drain and Source terminals, resulting in an electric field between them. This electric field then induces an electric current that flows between the Drain and Source terminals, depending on the magnitude of the Gate/Base current.
In addition to the Gate/Base current, the Drain current of 2SA1515STPQ is also affected by the Drain-Source voltage. As the voltage between the Drain and Source increases, the effective resistance between them also rises, resulting in a decrease in the amount of current that passes through the transistor.
When correctly used, the 2SA1515STPQ can be an efficient and reliable switch and amplifier for low-current applications. As long as the Gate/Base current is kept within a specified range and the drain-source voltage is limited to the transistor’s operating specifications, the performance of 2SA1515STPQ can be maximized.
The specific data is subject to PDF, and the above content is for reference
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