| Allicdata Part #: | 2SA1552T-TL-EOSTR-ND |
| Manufacturer Part#: |
2SA1552T-TL-E |
| Price: | $ 0.29 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 160V 1.5A TP-FA |
| More Detail: | Bipolar (BJT) Transistor PNP 160V 1.5A 120MHz 1W S... |
| DataSheet: |  2SA1552T-TL-E Datasheet/PDF |
| Quantity: | 1400 |
| 700 +: | $ 0.27307 |
| 1400 +: | $ 0.21845 |
| 2100 +: | $ 0.19797 |
| 4900 +: | $ 0.18432 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 1.5A |
| Voltage - Collector Emitter Breakdown (Max): | 160V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 5V |
| Power - Max: | 1W |
| Frequency - Transition: | 120MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | 2-TP-FA |
| Base Part Number: | 2SA1552 |
Description
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The 2SA1552T-TL-E is a vertically framed NPN transistor commonly used in audio circuits such as circuit amplifiers and receivers. It is especially used in nuclear reactors and high power industrial applications due to its high operational temperature range.The 2SA1552T-TL-E belongs to the family of transistors known as bipolar junction transistors or BJTs. It is a three-layer semiconductor device consisting of an n-type layer, a p-type layer, and a third layer of n-type material. BJTs are primarily used as switches and amplifiers in electronic circuits.The 2SA1552T-TL-E is a single BJT, meaning that it is a single component made up of one n-type layer and one p-type layer. It is also known as an NPN transistor, meaning that the n-layer is the base and the p-layer is the emitter. A single BJT can be used as an amplifier, a switch, or both.The 2SA1552T-TL-E’s application field is mainly in audio circuit amplifiers and receivers, where it is used as a switch or amplifier. It is also used in nuclear reactors, due to its moderately high temperature range, and in high power industrial applications.The working principle of the 2SA1552T-TL-E is based on the semiconductor properties of the two layers. The two layers are made of semiconductor materials with different electron concentrations. When a current is applied to the base, electrons flow through the n-layer and combine with the holes in the p-layer. This creates a transistor action, with the current being amplified at the emitter. The 2SA1552T-TL-E can be biased in a variety of ways, but one of the most common is through collector to base biasing.In collector to base biasing, a small current is applied to the base, causing electrons to flow through the n-layer. The electrons then mix with the holes in the p-layer and create a current at the emitter. This current can be further amplified by biasing the collector to a higher voltage, resulting in a greater current gain.The 2SA1552T-TL-E is a versatile and reliable transistor, and is commonly used in audio circuits, nuclear reactors, and high power industrial applications. Its application field and working principle make it a popular choice for those looking for reliable and robust Bipolar Junction Transistors.
The specific data is subject to PDF, and the above content is for reference
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