| Allicdata Part #: | 2SA1587-BLLFTR-ND |
| Manufacturer Part#: |
2SA1587-BL,LF |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PNP 120V 0.1A USM |
| More Detail: | Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 100... |
| DataSheet: | 2SA1587-BL,LF Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.03043 |
| 6000 +: | $ 0.02646 |
| 15000 +: | $ 0.02249 |
| 30000 +: | $ 0.02117 |
| 75000 +: | $ 0.01985 |
| 150000 +: | $ 0.01764 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 120V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 350 @ 2mA, 6V |
| Power - Max: | 100mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 125°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | USM |
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2SA1587-BL,LF Application Field and Working Principle
The 2SA1587-BL,LF is a single, low-power Bi-polar Junction Transistor (BJT). Used for signal, RF and telecommunication application, it is an NPN device with high gains and low current consumption The 2SA1587-BL,LF is manufactured both in three lead and five lead packages.
The 2SA1587-BL,LF has a wide range of use and applications in signal and control circuits, systems AC and DC power supplies, DC-AC converters, audio stages and RF stage amplifiers. The transistor is believed to have a fast operating frequency, making it ideal for UHF applications. Furthermore, it is believed to have a low noise element, allowing it to be used in applications where high sensitivity is required, such as noise and vibration measurements.
The 2SA1587-BL,LF has a number of advantages that set it apart from other transistors. These advantages include wide gain-bandwidth product, application versatility and high-speed switching. The transistor is also a low-power device, making it ideal for use in small circuits.
The working principle of the 2SA1587-BL,LF is as follows. The main purpose of a BJT is to create an amplification effect. This is done through the process of controlling the current flow in a transistor using a voltage signal. This current flow can be directed in either the forward or the reverse directions. In the forward direction, the current flows from the emitter to the collector. In the reverse direction, the current flows from the collector to the emitter.
This current is regulated by a base-emitter junction. This junction is usually formed by a diode. The diode allows current to flow in both directions, but also allows only a certain amount of current to flow in one direction. These current values are determined by the voltage being applied to the base-emitter junction. This allows even small changes in the base-emitter voltage to affect the current values in the circuit.
So, in conclusion, the 2SA1587-BL,LF is a single, low-power Bi-polar Junction Transistor (BJT) that is used for signal, RF and telecommunication application. The transistor has a wide range of use and applications, allowing it to be used in variety of circuits. Furthermore, the transistor has a wide gain-bandwidth product, application versatility and high-speed switching. Lastly, the working principle of the BJT is to create an amplification effect by controlling the current flow through the transistor using a voltage signal.
The specific data is subject to PDF, and the above content is for reference
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2SA1587-BL,LF Datasheet/PDF