2SA1680,T6F(J

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 1A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 100mA, 2V
Power - Max:	900mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92MOD

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2SA1680,T6F is a single bipolar transistor, generally more suited for audio and low frequency, medium power switching and amplifier applications. It is characterized by a high current, low working voltage and good thermal characteristics.

The 2SA1680,T6F is a common type of small signal transistor. It’s the kind of transistor that is used to amplify and switch low-power signals. Its applications include RF (radio frequency) amplifiers, oscillators, and other low power electronic circuits. The 2SA1680,T6F is a six-pin discrete semiconductor device. It’s typically housed in a TO-92 plastic package, although some models may be packaged in a TO-126 package.

The main properties of the 2SA1680,T6F transistor include its high-voltage, low-frequency, and medium-power characteristics. The 2SA1680,T6F is capable of handling higher voltage, lower-current and medium-power applications. It also offers low-level on and off switching, which is ideal for light-load switching applications. In terms of frequency range, the 2SA1680,T6F offers wide frequency coverage and excellent linearity. This makes it highly suited for use in RF amplifiers.

The 2SA1680,T6F is also characterized by excellent thermal characteristics. It has a high thermal rating, which allows it to handle high-power applications with significantly reduced power dissipation. This also means that it\'s capable of handling higher voltages and currents even when operating in an elevated temperature range. The 2SA1680,T6F is ideal for power amplifier and RF amplifier applications.

The working principle of the 2SA1680,T6F is based on the principle of transistor amplification. When a voltage is applied to the base, a small current flows from the base terminal to the collector. This current contacts a current source, which then amplifies the current. The resulting current is then delivered to the emitter. This amplified current can then be used for power amplification or for switching applications.

The 2SA1680,T6F is a robust transistor that is ideal for use in a variety of low-power and RF amplifier applications. Its thermal characteristics make it highly suitable for high-power applications, while its linearity and wide frequency range make it an ideal choice for RF amplifiers and oscillators. Additionally, its low working voltage and good thermal characteristics make it suitable for use in light-load switching applications.

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