Allicdata Part #: | 2SA1709S-EPN-AN-ND |
Manufacturer Part#: |
2SA1709S-EPN-AN |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS BIPO NMP |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2SA1709S-EPN-AN Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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Transistors are an important component of electronic circuits, most commonly used as amplifiers and switches. The 2SA1709S-EPN-AN is a single bipolar junction transistor (BJT) designed for use in audio amplifiers and other consumer electronics applications. This article will discuss the application field and working principle of the 2SA1709S-EPN-AN.
The 2SA1709S-EPN-AN is a high-power NPN silicon BJT designed for use in audio amplifiers and other consumer electronics applications. The device features an EP substrate, which is capable of dissipating a maximum power rating of 2.6W. It also has a maximum collector current rating of 7A, making it suitable for a wide range of applications. The transistor also offers excellent thermal stability and high reliability.
The 2SA1709S-EPN-AN can be used for audio amplifiers, switch mode power supplies, and motor control applications. It is also suitable for use in a wide range of consumer electronics products, including televisions, DVD players, and computers. Furthermore, it is capable of operating at high temperatures and is able to handle large current and power requirements.
The working principle of the 2SA1709S-EPN-AN is similar to other BJTs. When a small current is applied to the base of the device, it allows electrical current to flow from the collector to the emitter. This generates a large current or output signal, which is amplified depending on the applied current and the device\'s gain. When the applied current is removed, the transistor turns off, preventing the flow of electrical current.
The 2SA1709S-EPN-AN is designed to operate within a wide range of temperatures. It can handle up to +150°C, which is well above typical operating temperatures. The device also offers excellent thermal stability and a wide range of operating voltages, ranging from about 4V to 60V DC. The device also offers excellent reliability and long-term stability.
In conclusion, the 2SA1709S-EPN-AN is a high-power NPN silicon BJT designed for use in audio amplifiers and other consumer electronics applications. The device offers excellent thermal stability, a wide operating temperature range, and excellent reliability and long-term stability. The device can be used for audio amplifiers, switch mode power supplies, motor control applications, and a wide range of consumer electronics products. The working principle of the 2SA1709S-EPN-AN is similar to other BJTs, in which it allows electrical current to flow from the collector to the emitter upon the application of a small current to the base.
The specific data is subject to PDF, and the above content is for reference
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