Allicdata Part #: | 2SA1768T-AN-ND |
Manufacturer Part#: |
2SA1768T-AN |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 160V 0.7A NMP |
More Detail: | Bipolar (BJT) Transistor PNP 160V 700mA 120MHz 1W ... |
DataSheet: | 2SA1768T-AN Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 700mA |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 25mA, 250mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SC-71 |
Supplier Device Package: | 3-NMP |
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The 2SA1768T-AN is a silicon-epitaxial-planar PNP bipolar transistor. It is a single transistor, and is a member of the Transistors - Bipolar (BJT) - Single family. The transistor has a symmetrical structure which results in excellent current gain uniformity, and its ultra-small thin-film SMD package makes it ideal for a broad range of applications.
The 2SA1768T-AN can be used in a variety of applications, but is particularly well suited for use in high-frequency switching circuits. It is ideal for switching current and voltage drives in power amplification circuits, and it has a low saturation voltage and low power consumption. It is also great for use in pulse circuits, low distortion circuits and audio amplifiers.
The working principle of the 2SA1768T-AN is based on the principle of current gain. The transistor has three main components: the collector, base and emitter. When current passes through the base, the collector-emitter current increases exponentially with the base current, resulting in a large current gain. This increase in current gain is achieved due to the transistor\'s internal structure and the holes created in the base region, which create a "directional valve" that allow more electrons to flow through the collector-emitter junction.
In order to achieve its maximum current gain, the 2SA1768T-AN must be operated with a collector current between 10mA and 300mA and a base voltage of between 0.2V and 1.5V. The maximum collector current is 1A, and the maximum collector-emitter voltage is 150V. The device is also well suited for use at high frequencies, with a maximum frequency of 2GHz.
The 2SA1768T-AN is a reliable and versatile transistor that can be used in a wide range of applications. It has a wide range of operating conditions, and its ultra-small thin-film SMD package means it can be used in space-constrained circuits. Its symmetrical structure also makes it ideal for use in circuits requiring high current gain uniformity, and its low saturation voltage and low power consumption makes it efficient and cost-effective.
The specific data is subject to PDF, and the above content is for reference
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