2SA1834TLR Allicdata Electronics
Allicdata Part #:

2SA1834TLRTR-ND

Manufacturer Part#:

2SA1834TLR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 20V 10A SOT-428
More Detail: Bipolar (BJT) Transistor PNP 20V 10A 150MHz 1W Sur...
DataSheet: 2SA1834TLR datasheet2SA1834TLR Datasheet/PDF
Quantity: 7500
Stock 7500Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Base Part Number: 2SA1834
Description

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A 2SA1834TLR transistor is a low noise, low voltage, low power NPN bipolar junction transistor (BJT). A BJT operates by controlling the current flow within a three-terminal device. The 2SA1834TLR has a collector current range of 10 to 50 mA, collector-emitter voltage range of -30 to -200 V, and emitter-base voltage of -7V.

The 2SA1834TLR is primarily used in low frequency switching applications, including audio amplification and signal conditioning, where its low noise characteristics are beneficial. It is also used in automotive, LCD TV, instrumentation and medical applications, where its low voltage and power capabilities are advantageous. As an NPN device, the 2SA1834TLR has the easiest to drive configuration, making it suitable for high speed driving of relay and latch circuits, where lower drive voltages are desirable.

The working principle of the 2SA1834TLR is based on BJT technology. By applying a small current in the base terminal of the transistor, current can be controlled at the collector and emitter terminals. In the off state, the base-emitter junction is reverse biased and no current flows through the transistor. When the base-emitter junction is forward biased, current flows and is amplified in the collector-emitter junction.

The 2SA1834TLR operates in a bipolar situation due to the presence of two p-type and n-type semiconductors in the transistor. There is a P-N-P transistor at the collector and an N-P-N transistor at the base. Current flows between the collector and emitter terminals in one direction when the base-emitter junction is forward biased, and in the opposite direction when it is reverse biased. This creates the bi-directional conduction that distinguishes a bipolar transistor from its unipolar counterpart, the Field Effect Transistor (FET).

The 2SA1834TLR is an excellent choice for applications where low noise, low voltage and low power are desired. Its excellent current gain and low power capabilities make it suitable for use in audio amplification and signal conditioning, as well as automotive, LCD TV, instrumentation and medical applications. Its bi-directional conduction also makes it suitable for driving of relay and latch circuits, where lower drive voltages are desirable.

The specific data is subject to PDF, and the above content is for reference

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