2SA1837,HFEYHF(M Allicdata Electronics
Allicdata Part #:

2SA1837HFEYHF(M-ND

Manufacturer Part#:

2SA1837,HFEYHF(M

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 1A 230V TO220-3
More Detail: Bipolar (BJT) Transistor PNP 230V 1A 70MHz 2W Thro...
DataSheet: 2SA1837,HFEYHF(M datasheet2SA1837,HFEYHF(M Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS
Description

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A 2SA1837,HFEYHF(M is a single-type bipolar junction transistor (BJT) and is a type of active device. It is most commonly used as a small-signal audio amplifier. Specifically, it is a single-type PNP transistor manufactured by Sanyo Semiconductor, used in a variety of consumer electronics. This device is designed to provide superior performance when operating in both switching and amplification modes.

The 2SA1837,HFEYHF(M features a maximum collector-emitter voltage of 32 volts, a minimum collector current of 80 mA and a maximum continuous collector current of 250 mA. It also has a maximum collector dissipation of 2.8W, an emitter-base voltage of 6V, a forward current gain of 40-50, and a collector-emitter saturation voltage of 0.2V. It can be used as both a general-purpose audio amplifier and a wide-band amplifier.

The main application field for the 2SA1837,HFEYHF(M lies in audio amplification, as it is a small-signal audio amplifier. The device\'s high gain and low saturation voltage allow for fast switching and a minimum amount of distortion, making it ideal for audio applications. It is also used for wide-band amplification, as it has a wide frequency range.

In terms of working principle, the 2SA1837,HFEYHF(M operates through the process of hole injection. When the current passes through the Collector-Base junction, charge carriers move from the emitter-base junction, injecting holes into the base region. This creates an inverted collector-emitter voltage and current, which cause the transistor to act as an amplifier.

The device works in both switching and amplifying modes. In switching mode, it acts as a fast-acting switch, allowing high-current pulses to be generated quickly and accurately. When operated as an amplifier, the device amplifies small electrical signals that cause it to transition between open and closed states. This transition can be used to create a signal of varying amplitude and frequency, depending on the requirements of the design.

In summary, the 2SA1837,HFEYHF(M is a single-type bipolar junction transistor (BJT). It is primarily used for audio amplification and wide-band amplification applications, and works by utilizing hole injection. It can be used both as a switch and an amplifier and is an ideal device for designs requiring a high current rating and fast switching speed.

The specific data is subject to PDF, and the above content is for reference

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