2SA1930,LBS2DIAQ(J

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	180V
Vce Saturation (Max) @ Ib, Ic:	1V @ 100mA, 1A
Current - Collector Cutoff (Max):	5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 5V
Power - Max:	2W
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220NIS

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2SA1930,LBS2DIAQ(J application field and working principleBipolar junction transistors (BJTs) are three-terminal semiconductor devices made of layers of doped semiconductor and two types of junctions. These devices have the ability to amplify electrical signals and are mainly used in applications where signal amplification is needed. BJT are classified into two primary types, the most common one being the NPN type, characterized by two P-type and one N-type layers. The P2N2 junction transistor is also seen in some types, characterized by two N-type and one P-type layers. 2SA1930 and LB-S2DIAQ(J are two commonly used power transistor from the single type bipolar junction transistor family. They are mainly used for general purpose switching and audio power amplifier applications. They are manufactured in a standard TO-220 package with a 5-pins configuration.The working principle of 2SA1930 and LB-S2DIAQ(J power transistors is based on the base-emitter junction. When a small base current is applied to the transistor, it triggers a large emitter-to-collector current flow. When the base current is removed, the emitter-to-collector current stops flowing. This process of controlling a large current flow by a small base current is the essence of transistor action. The 2SA1930 transistor is an NPN type power transistor manufactured using the epitaxial-base process with a unique PNPN structure. It has a collector current of 3A and a collector-emitter voltage (VCE) of 30V. It can handle a maximum of 25W in the TO-220 package. The LB-S2DIAQ(J is also an NPN type power transistor manufactured using the epitaxial planar process. It has a collector current of 20A and a collector-emitter voltage (VCE) of 60V. It can handle a maximum of 75W in the TO-220 package.2SA1930 and LB-S2DIAQ(J can be used in many audio power amplifier applications, high-frequency class-D audio amplifiers, voltage regulator modules (VRMs), switching power supplies, high-current hard-switched applications, high-side current detectors etc. 2SA1930 and LB-S2DIAQ(J transistors operate in saturation and cut-off regions. In the saturation region, the voltage drop from base to emitter (VBE) is low, and the collector-to-emitter voltage (VCE) is also low, allowing a high current flow through the device. In this region, the collector current is determined by the base current. In the cut-off region, the VBE is large and the VCE is high, effectively blocking the current flow. The switch-off time of the device is determined by the time taken for the VBE to reach the cut-off region.2SA1930 and LB-S2DIAQ(J transistors are also used in switching applications. In switching applications, a voltage or current is applied to the input and the transistor switches on or off depending on the levels of the input. The switching speed of the transistor is determined by the input levels and the off-state leakage current. In conclusion, 2SA1930 and LB-S2DIAQ(J are two power transistors from the single type bipolar junction transistor family that are used in many audio power amplifier, switching power supplies and other high-current applications. They are characterized by their ability to amplify electrical signals and operate in both saturation and cut-off regions. From their wide range of applications, it is clear that these two transistors are an indispensable part of the modern electronics industry.

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