2SA1930,ONKQ(J

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The 2SA1930, ONKQ(J is a single type bipolar junction transistor (BJT) and is designed with a PNP configuration. It is a low power transistor intended to be used in general purpose low signal applications. The 2SA1930, ONKQ(J can be used in signal amplifying and switching circuits. This transistor has maximum current gain, minimum noise characteristics and excellent optimum frequency response. It is typically found in audio amplifiers, radio receivers and audio applications.

The 2SA1930, ONKQ(J is a general-purpose transistor used for a wide variety of applications. Its operating principles are relatively simple and straightforward. The transistor consists of three terminals, one emitter, one base, and one collector. The emitter is the device\'s input, and the collector is the device\'s output. When an electrical current is sent to the base, it activates the transistor, causing current to flow through the device. This current is then amplified in the process of being outputted from the collector.

The maximum current gain (hfe) of the 2SA1930, ONKQ(J is around 200 at collector current of 500mA. The minimum noise characteristics at its collector current of 500mA is around 20dB. This transistor is capable of reaching optimum frequency response in the range of 300 kHz products which is suitable for commonplace audio purposes. The 2SA1930, ONKQ(J has a maximum collector power dissipation of 500mW, so it is important that the input within the circuit has a voltage level that is appropriate for this.

The 2SA1930, ONKQ(J is a high-performance, low-power bipolar junction transistor designed for general purpose applications. It offers high current gains with excellent noise characteristics, as well as an optimal frequency response. Its maximum collector power dissipation must be adhered to in order to ensure a successful circuit design.

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