Allicdata Part #: | 2SA1931NETQ(J-ND |
Manufacturer Part#: |
2SA1931,NETQ(J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 5A 50V TO220-3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 5A 60MHz 2W Throu... |
DataSheet: | 2SA1931,NETQ(J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 1V |
Power - Max: | 2W |
Frequency - Transition: | 60MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220NIS |
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The 2SA1931, NETQ(J is a single bipolar transistor that is often used in a wide range of applications. It is especially useful in applications that require high breakdown voltage, high current gain, and low on or off resistance. The device is a PNP type, with a collector-emitter voltage (Vce) rating of 2.5V. It operates at a maximum collector current (Ic) of 1.0A and a maximum frequency of 1MHz.
The transistor is used in many different circuits, from simple switch applications to more complicated analog circuits. It can also be used for amplifying signals in audio circuits and driving output transistors in switching power converters. The device also has applications in low-noise high-frequency circuits and high-temperature environmental jitter applications.
The 2SA1931, NETQ(J has a simple working principle. It operates as a current control device, with its base terminal continually supplying a current to its collector terminal. This current is then transformed into a voltage, which is then amplified by the emitter terminal and sent out to the output. The base to emitter voltage (Vbe) then controls the gain of the amplifier, as well as the amount of current that is supplied to the collector terminal.
The transistor also has a low on or off resistance, due to its design. This means that it can be used in circuits that require a fast switching speed or a high switching current. The device has an excellent breakdown voltage of 400V, and can be used in circuits that require high voltage isolation or high voltage switching.
The 2SA1931, NETQ(J is a high-performance, high-speed transistor that is well suited for a variety of applications. Its low on/off resistance, high breakdown voltage and high current gain make it an ideal choice for many different applications. It can be used in audio and switch mode power converters, as well as high frequency, high-temperature, and environmental jitter applications.
The specific data is subject to PDF, and the above content is for reference
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