Allicdata Part #: | 2SA1931Q(J-ND |
Manufacturer Part#: |
2SA1931,Q(J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 5A 50V TO220-3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 5A 60MHz 2W Throu... |
DataSheet: | 2SA1931,Q(J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 1V |
Power - Max: | 2W |
Frequency - Transition: | 60MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220NIS |
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2SA1931,Q(J Application Field and Working Principle
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. The 2SA1931,Q(J Transistor belongs to the single bipolar junction transistor (BJT) family of transistors. It is a bipolar transistor with two PNP terminals, designed to perform small signal, low power amplification and switching applications.
Features of 2SA1931,Q(J Transistor
The 2SA1931,Q(J Transistor has the following features:
- Maximum Power Dissipation: 1.5W
- Maximum Collector Current: 130mA
- Maximum Collector-Emitter Voltage: 10V
- Maximum Collector-Base Voltage: 10V
- Maximum Emitter-Base Voltage: 5V
- Minimum hFE: 26 (Ic=1mA)
- Typical hFE: 180 (Ic=10mA)
- Maximum Strobe Frequency: 10 GHz
- Maximum Operating Temperature: 150°C
Uses of 2SA1931,Q(J Transistor
The 2SA1931,Q(J Transistor is commonly used in the following application fields:
- Low current, low power amplifier and switching applications
- Inverter applications
- DC-DC converter applications
- Speed control applications
- Lighting applications
- Low current converter applications
Working Principle of 2SA1931,Q(J Transistor
The 2SA1931,Q(J Transistor is a PNP Transistor which has three terminals: Collector (C), Emitter (E) and Base (B). Due to its low power dissipation capability and its ability to amplify input signals the transistor is ideal for use in low power amplifier and switching applications.
The base-emitter junction of the transistor acts as a regular diode. When a positive voltage is applied to the base of the transistor, the diode starts to conduct and allows a flow of electrons from the emitter to the collector. This is known as Saturation as the output current is now controlled by the base current. As the base-emitter junction of the transistor is forward biased, current is allowed to flow from the collector to the emitter and the transistor is now in its active region.
When the base voltage is increased, the output current increases accordingly. This is the principal of transistor amplifying signal. Moreover, when a negative voltage is applied to the base, the transistor is cut off and no current will flow between the collector and the emitter.
Conclusion
The 2SA1931,Q(J Transistor is a single bipolar junction transistor designed to be used in low power, low current amplifier and switching applications. It is a PNP transistor with three terminals: collector, emitter and base. When a positive voltage is applied to the base of the transistor, it will start to conduct, while when a negative voltage is applied, the transistor is cut off and no current will flow between the collector and the emitter.
The specific data is subject to PDF, and the above content is for reference
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