Allicdata Part #: | 2SA1954BTE85LFTR-ND |
Manufacturer Part#: |
2SA1954BTE85LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 12V 0.5A USM |
More Detail: | Bipolar (BJT) Transistor PNP 12V 500mA 130MHz 100m... |
DataSheet: | 2SA1954BTE85LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 200mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 500 @ 10mA, 2V |
Power - Max: | 100mW |
Frequency - Transition: | 130MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
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2SA1954BTE85LF transistors are categorized under the Single Bipolar Junction Transistor (BJT) type. This semiconductor device is used mainly for switching and amplifying electrical signals. As with other transistors, the 2SA1954BTE85LF has its own unique construction, features and operation, and will be discussed in this article.
To start with, the 2SA1954BTE85LF is a NPN (negative-positive-negative) type transistor that consists of three p-n junctions connected between a pair of electrodes. It has a low current gain of 150 to 350, and a maximum collector current of 800mA (milliamps). It has a maximum power dissipation of 300mW (milliwatts), a breakdown voltage of 40V (volts) and a maximum collector-emitter voltage of 40V. The recommended operating temperature range is from -55oC to +150oC.
In terms of its applications, the 2SA1954BTE85LF is typically used for industrial control and computer applications. It is often used as a switch as it can turn on and off a current supply quickly and reliably. It can also be used as an amplifier, as it can increase the voltage level of a signal to enable it to travel further without being degraded.
The working principle of the 2SA1954BTE85LF is based on the number of p-n junctions the transistor contains. The p-n junctions are made up of two doped semiconductor materials, one p-type material and one n-type material. The p-type material is positively charged and the n-type material is negatively charged. When a voltage is applied to the transistor, the electrons in the n-type material will be drawn to the positively charged material, and the positively charged holes in the p-type material will be drawn to the negatively charged material. This will create a small electric current between the two electrodes. This current can then be used to switch or amplify electrical signals.
The 2SA1954BTE85LF is a popular and reliable choice for applications that require a single bipolar junction transistor. It is durable, has a good current gain, and can handle large amounts of power. Additionally, its operating temperatures are wide enough to be used in many harsh environments. Thanks to its reliable performance, the 2SA1954BTE85LF transistor is often used in industrial and computer applications.
The specific data is subject to PDF, and the above content is for reference
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