2SA1972,T6WNLF(J Allicdata Electronics
Allicdata Part #:

2SA1972T6WNLF(J-ND

Manufacturer Part#:

2SA1972,T6WNLF(J

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 500MA 400V TO226-3
More Detail: Bipolar (BJT) Transistor PNP 400V 500mA 35MHz 900m...
DataSheet: 2SA1972,T6WNLF(J datasheet2SA1972,T6WNLF(J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 20mA, 5V
Power - Max: 900mW
Frequency - Transition: 35MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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The 2SA1972,T6WNLF(J transistor is a type of bipolar junction transistor (BJT). Even though it is sometimes referred to as a single package transistor, it is actually two transistors in one – two PNP transistors. It is mainly used as a power amplifier in general consumer applications such as amplifiers, stereo systems, mixers, and so forth. It is also used as a voltage regulator in car radios, PA systems, and other consumer products.

Overview

The 2SA1972,T6WNLF(J is made up of two PNP transistors, both with the same specifications. It has a maximum collector-to-base voltage of 25V and a maximum collector current of 0.15A. The power dissipation for the device is up to 0.7W at 25°C and decreases linearly with increasing temperature. The maximum operating temperature for the device is between -55 and +150 degrees Celsius. The transistor has a breakdown voltage of 25V and a saturation voltage of 0.2V to 0.4V. The gain-bandwidth is also pretty good at 5 MHz, making this a good choice for high-frequency applications.

Applications

The 2SA1972,T6WNLF(J is mainly used as a power amplifier in consumer electronics applications. It is also used in the following applications:

  • Car radios:
    • for power supply and voltage regulation.
  • PA systems:
    • for power amplifiers.
  • Audio amplifiers:
    • for low-frequency signal amplification.
  • Electric heating circuits:
    • for power switches.

Working Principle

The 2SA1972,T6WNLF(J is a two-stage bipolar junction transistor (BJT) consisting of two PNP transistors. The two transistors are wired together so that the base of the first transistor is connected to the collector of the second transistor. The base of the second transistor is then connected to the collector of the first transistor. In this way, the two transistors form a bridge circuit, allowing current to flow through both transistors at the same time. When a small voltage is applied to the base of the first transistor, current will flow through the bridge circuit and power the load.

This type of configuration is often used for power amplifiers because it allows the device to operate at both low and high frequencies. By controlling the base current of the first transistor, the effective gain of the transistor can be adjusted, allowing for a wide range of power amplification. Additionally, the two transistors provide redundant current capability, allowing the device to be operated safely at high power levels.

Conclusion

The 2SA1972,T6WNLF(J is a two-stage bipolar junction transistor (BJT) consisting of two PNP transistors. This device is mainly used as a power amplifier in consumer electronics applications such as car radios, PA systems, and audio amplifiers. It also has other applications in electric heating circuits. The 2SA1972,T6WNLF(J is capable of providing good power performance at both low and high frequencies and is also capable of providing redundant current capability for safe operation at high power.

The specific data is subject to PDF, and the above content is for reference

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