![2SB1201S-E Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 2SB1201S-EOS-ND |
Manufacturer Part#: |
2SB1201S-E |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 2A TP-FA |
More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW S... |
DataSheet: | ![]() |
Quantity: | 2500 |
1 +: | $ 0.42840 |
10 +: | $ 0.37674 |
100 +: | $ 0.28886 |
500 +: | $ 0.22835 |
1000 +: | $ 0.18268 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 140 @ 100mA, 2V |
Power - Max: | 800mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | 2-TP-FA |
Base Part Number: | 2SB1201 |
Description
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The 2SB1201S-E is a bipolar junction transistor, or BJT, typically used as an amplifier. With single-chip construction, it can be used in a variety of power and analog application fields, particularly in switch-mode power supply systems, radio frequency systems, and in the field of communications engineering. This article will explain the 2SB1201S-E’s application fields and workings.
2SB1201S-E Application Fields
The 2SB1201S-E is designed for excellent switching performance and has a wide range of potential applications. Here are a few of the scenarios in which the 2SB1201S-E is typically used:
- Switch-mode power supply systems
- Radio frequency systems
- TV sets, displays, and monitors
- Audio systems
- CCTVs
- Automotive electronics
- Computer components
- Industrial and medical control systems
- Scanners, facsimile machines, and printers
2SB1201S-E Working Principle
The 2SB1201S-E is a transistor with a PNP-type, meaning it is made up of three layers: the emitter, the base, and the collector. These layers are embedded in a semiconductor material, usually silicon, where each layer is composed of either n-doped or p-doped material.An electric current is sent through the emitter and base layers, which causes the emitter to allow the electrons to be drawn out of it and the base to draw them in. This creates a potential difference between the emitter and base layers, which causes the electrons to be “pulled” away from the emitter and toward the base. As they are drawn toward the base, they cause the collector layer’s current to increase, thus amplifying the current.This is essentially how the 2SB1201S-E works, and it can be used to amplify small current signals into larger output signals. It can also be used as a switch, where current flows either between the emitter and collector, or between the base and the collector. In this way, the 2SB1201S-E can be used to control larger currents with smaller signals.
Conclusion
The 2SB1201S-E is a bipolar junction transistor with single-chip construction. It is used in many power and analog applications, particularly switch-mode power supplies, radio frequency systems, and communications engineering. It amplifies small currents into larger output signals and can be used as a switch to control larger currents with smaller signals.
The specific data is subject to PDF, and the above content is for reference
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