| Allicdata Part #: | 2SB1121T-TD-EOSTR-ND |
| Manufacturer Part#: |
2SB1121T-TD-E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 25V 2A SOT89-3 |
| More Detail: | Bipolar (BJT) Transistor PNP 25V 2A 150MHz 500mW S... |
| DataSheet: | 2SB1121T-TD-E Datasheet/PDF |
| Quantity: | 2000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 25V |
| Vce Saturation (Max) @ Ib, Ic: | 600mV @ 75mA, 1.5A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 2V |
| Power - Max: | 500mW |
| Frequency - Transition: | 150MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-243AA |
| Supplier Device Package: | PCP |
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The 2SB1121T-TD-E is a bipolar junction transistor that is suitable for a wide variety of applications, such as general purpose amplification, switching, and logic level control. This particular PNP transistor is designed with a low current and high voltage capacity, making it ideal for medium-power applications, especially where small size is a factor.
The 2SB1121T-TD-E has an emitter-base voltage of 6 volts, a collector current of 2 amps, and a transition frequency of 1.5 GHz. It has a maximum power dissipation of 500 mW, a collector-emitter saturation voltage of 0.2 volts, and a hFE of 60-300. With the help of its built-in emitter-resistor, the 2SB1121T-TD-E can be used in a variety of applications, ranging from signal amplification to switching for electronic control systems.
As far as applications are concerned, the 2SB1121T-TD-E is commonly used in consumer electronics, automotive, telecommunications, and military applications. It is an excellent choice for medium-power applications, due to its ability to switch on and off quickly with low current and high voltage. Some other potential applications include: logic-level amplifiers, switching circuits, electronic control systems, and motor control circuits.
In order to understand how the 2SB1121T-TD-E works, it is necessary to understand the workings of a bipolar junction transistor. A bipolar junction transistor consists of three different regions: a base region, an emitter region, and a collector region. All three of these regions are connected by wires, allowing current to pass between them. When current is applied to the base region, it is amplified and passed through the emitter region to the collector region. This process is the basis of amplification and switching, and is the working principle behind the 2SB1121T-TD-E and all similar transistors.
The 2SB1121T-TD-E is an excellent choice for a wide variety of applications, due to its low current and high voltage strength, as well as its excellent switching ability. It can be used for signal amplification and electronic control systems, as well as for motor control and logic-level amplifiers. Understanding the basics of how it works is important for any user, and can provide greater insight into the potential applications for the 2SB1121T-TD-E.
The specific data is subject to PDF, and the above content is for reference
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2SB1121T-TD-E Datasheet/PDF